High voltage field effect transistor with vertical current paths and method of making the same

ABSTRACT

A field effect transistor for a high voltage operation can include vertical current paths, which may include vertical surface regions of a pedestal semiconductor portion that protrudes above a base semiconductor portion. The pedestal semiconductor portion can be formed by etching a semiconductor material layer employing a gate structure as an etch mask. A dielectric gate spacer can be formed on sidewalls of the pedestal semiconductor portion. A source region and a drain region may be formed underneath top surfaces of the base semiconductor portion. Alternatively, epitaxial semiconductor material portions can be grown on the top surfaces of the base semiconductor portions, and a source region and a drain region can be formed therein. Alternatively, a source region and a drain region can be formed within via cavities in a planarization dielectric layer.

FIELD

The present disclosure relates generally to the field of semiconductordevices and specifically to a high voltage field effect transistorincluding vertical current paths and methods of making the same.

BACKGROUND

Prior art high voltage field effect transistors often suffer fromsurface breakdown voltage. Such transistors often have a complexextended low doped drain (LDD) to improve surface breakdowncharacteristics at the expense of process complexity and increased cost.

SUMMARY

According to an aspect of the present disclosure, a semiconductorstructure is provided, which comprises: a shallow trench isolationstructure comprising a dielectric material and embedded within asemiconductor material layer and laterally surrounding an upper portionof the semiconductor material layer, wherein the upper portion of thesemiconductor material layer comprises a base semiconductor portioncomprising a pair of top horizontal surfaces and a pedestalsemiconductor portion located between the pair of top horizontalsurfaces and vertically protruding above a horizontal plane includingthe pair of top horizontal surfaces; a gate stack structure comprising agate dielectric and a gate electrode and including a pair of sidewallsthat are vertically coincident with a pair of sidewalls of the pedestalsemiconductor portion; a dielectric gate spacer contacting the pair ofsidewalls of the gate stack structure and the pair of sidewalls of thepedestal semiconductor portion; and a source region and a drain regionlocated within the base semiconductor portion and having a respectivetop surface located within the horizontal plane including the pair oftop horizontal surfaces of the base semiconductor portion.

According to another aspect of the present disclosure, a method offorming a semiconductor structure is provided, which comprises: forminga shallow trench isolation structure comprising a dielectric material inan upper region of a semiconductor material layer having a doping of afirst conductivity type, wherein the shallow trench isolation structurelaterally surrounds a device region of the semiconductor material layer;forming a gate stack structure comprising a gate dielectric and a gateelectrode over a center portion of the device region of thesemiconductor material layer; vertically recessing areas of the deviceregion of the semiconductor material layer that are not covered by thegate stack structure, wherein the device region of the semiconductormaterial layer includes a base semiconductor portion comprising a pairof top horizontal surfaces that are recessed below a bottom surface ofthe gate dielectric and a pedestal semiconductor portion located betweenthe pair of top horizontal surfaces and the bottom surface of the gatedielectric; forming a dielectric gate spacer on the pair of sidewalls ofthe gate stack structure and on a pair of sidewalls of the pedestalsemiconductor portion; and forming a source region and a drain regionwithin upper portions of the base semiconductor portion by dopingregions of the base semiconductor portion that underlies the pair of tophorizontal surfaces with dopants of a second conductivity type that isan opposite of the first conductivity type.

According to yet another aspect of the present disclosure, asemiconductor structure is provided, which comprises: a shallow trenchisolation structure comprising a dielectric material embedded within asemiconductor material layer and laterally surrounding an upper portionof the semiconductor material layer, wherein the upper portion of thesemiconductor material layer comprises a base semiconductor portioncomprising a pair of top horizontal surfaces and a pedestalsemiconductor portion located between the pair of top horizontalsurfaces and vertically protruding above a horizontal plane includingthe pair of top horizontal surfaces; a gate stack structure comprising agate dielectric and a gate electrode and including a pair of sidewallsthat are vertically coincident with a pair of sidewalls of the pedestalsemiconductor portion; a dielectric gate spacer contacting the pair ofsidewalls of the gate stack structure and the pair of sidewalls of thepedestal semiconductor portion; and a pair of epitaxial semiconductormaterial portions located on, and above, the pair of top horizontalsurfaces of the base semiconductor portion and epitaxially aligned tothe base semiconductor portion, wherein the pair of epitaxialsemiconductor material portions comprises a source region and a drainregion.

According to still another aspect of the present disclosure, a method offorming a semiconductor structure is provided, which comprises: forminga shallow trench isolation structure comprising a dielectric material inan upper region of a semiconductor material layer having a doping of afirst conductivity type, wherein the shallow trench isolation structurelaterally surrounds a device region of the semiconductor material layer;forming a gate stack structure comprising a gate dielectric and a gateelectrode over a center portion of the device region of thesemiconductor material layer; vertically recessing areas of the deviceregion of the semiconductor material layer that are not covered by thegate stack structure, wherein the device region of the semiconductormaterial layer includes a base semiconductor portion comprising a pairof top horizontal surfaces that are recessed below a bottom surface ofthe gate dielectric and a pedestal semiconductor portion located betweenthe pair of top horizontal surfaces and the bottom surface of the gatedielectric; forming a dielectric gate spacer on the pair of sidewalls ofthe gate stack structure and on a pair of sidewalls of the pedestalsemiconductor portion; and forming a pair of epitaxial semiconductormaterial portions by growing a single crystalline semiconductor materialfrom the pair of top horizontal surfaces of the base semiconductorportion, wherein a source region and a drain region having a doping of asecond conductivity type that is an opposite of the first conductivitytype are formed within upper regions of the pair of epitaxialsemiconductor material portions.

According to even another aspect of the present disclosure, asemiconductor structure is provided, which comprises: a gate stackstructure overlying a semiconductor material layer having a doping of afirst conductivity type and comprising a gate dielectric and a gateelectrode; a source extension region and a drain extension regionembedded in an upper portion of the semiconductor material layer andlocated on opposite sides of the gate stack structure; a planarizationdielectric layer overlying the gate stack structure, the sourceextension region, and the drain extension region; a first conductivepillar structure vertically extending through the planarizationdielectric layer in contact with the source extension region, having anarrower width than the source extension region, and comprising a sourceextension pillar structure and a source region; and a second conductivepillar structure vertically extending through the planarizationdielectric layer in contact with the drain extension region, having anarrower width than the drain extension region, and comprising a drainextension pillar structure and a drain region, wherein: the sourceextension region, the drain extension region, the source extensionpillar structure, the drain extension pillar structure, the sourceregion, and the drain region have a doping of a second conductivity typethat is opposite of the first conductivity type; and the source regionand the drain region include dopants of the second conductivity type ata higher atomic concentration than the source extension pillar structureand the drain extension pillar structure.

According to further another aspect of the present disclosure, a methodof forming a semiconductor structure is provided, which comprises:forming a gate stack structure comprising a gate dielectric and a gateelectrode over a semiconductor material layer having a doping of a firstconductivity type; forming a source extension region and a drainextension region in the semiconductor material layer on opposite sidesof the gate stack structure; forming a planarization dielectric layeroverlying the gate stack structure, the source extension region, and thedrain extension region; forming a pair of via cavities through theplanarization dielectric layer, wherein a top surface of the sourceextension region and the drain extension region are physically exposed;and forming a first conductive pillar structure and a second conductivepillar structure within the pair of via cavities, wherein: the firstconductive pillar structure comprises a source extension pillarstructure and a source region; the second conductive pillar structurecomprises a drain extension pillar structure and a drain region; thesource extension region, the drain extension region, the sourceextension pillar structure, the drain extension pillar structure, thesource region, and the drain region have a doping of a secondconductivity type that is opposite of the first conductivity type; andthe source region and the drain region include dopants of the secondconductivity type at a higher atomic concentration than the sourceextension pillar structure and the drain extension pillar structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a vertical cross-sectional view of a first device region of afirst exemplary structure after formation of shallow trench isolationstructures according to an embodiment of the present disclosure.

FIG. 1B is a vertical cross-sectional view of a second device region ofthe first exemplary structure after formation of the shallow trenchisolation structures according to an embodiment of the presentdisclosure.

FIG. 1C is a top-down view of the first device region of the firstexemplary structure of FIG. 1A.

FIG. 1D is a top-down view of the second device region of the firstexemplary structure of FIG. 1B.

FIG. 2A is a vertical cross-sectional view of the first device region ofthe first exemplary structure after formation of a first gate dielectriclayer according to an embodiment of the present disclosure.

FIG. 2B is a vertical cross-sectional view of the second device regionof the first exemplary structure after formation of a second gatedielectric layer according to an embodiment of the present disclosure.

FIG. 3A is a vertical cross-sectional view of the first device region ofa first exemplary structure after formation of a first gate stackstructure according to an embodiment of the present disclosure.

FIG. 3B is a vertical cross-sectional view of the second device regionof the first exemplary structure after formation of a second gate stackstructure according to an embodiment of the present disclosure.

FIG. 3C is a top-down view of the first device region of the firstexemplary structure of FIG. 3A.

FIG. 3D is a top-down view of the second device region of the firstexemplary structure of FIG. 3B.

FIG. 4A is a vertical cross-sectional view of the first device region ofthe first exemplary structure after masking the second device region andformation of a source-side cavity and a drain-side cavity in the firstdevice region according to an embodiment of the present disclosure.

FIG. 4B is a vertical cross-sectional view of the second device regionof the first exemplary structure after masking the second device regionand formation of a source-side cavity and a drain-side cavity in thefirst device region according to an embodiment of the presentdisclosure.

FIG. 5A is a vertical cross-sectional view of the first device region ofthe first exemplary structure after formation of source extensionregions and drain extension regions according to an embodiment of thepresent disclosure.

FIG. 5B is a vertical cross-sectional view of the second device regionof the first exemplary structure after formation of source extensionregions and drain extension regions according to an embodiment of thepresent disclosure.

FIG. 6A is a vertical cross-sectional view of the first device region ofthe first exemplary structure after formation of dielectric gatespacers, shallow trench isolation spacers, source regions, and drainregions according to an embodiment of the present disclosure.

FIG. 6B is a vertical cross-sectional view of the second device regionof the first exemplary structure after formation of dielectric gatespacers, shallow trench isolation spacers, source regions, and drainregions according to an embodiment of the present disclosure.

FIG. 6C is a top-down view of the first device region of the firstexemplary structure of FIG. 6A.

FIG. 6D is a top-down view of the second device region of the firstexemplary structure of FIG. 6B.

FIG. 7A is a vertical cross-sectional view of the first device region ofthe first exemplary structure after formation of a planarizationdielectric layer and contact via structures according to an embodimentof the present disclosure.

FIG. 7B is a vertical cross-sectional view of the second device regionof the first exemplary structure after formation of a planarizationdielectric layer and contact via structures according to an embodimentof the present disclosure.

FIG. 7C is a vertical cross-sectional view of the first device region ofthe first exemplary structure of FIG. 7A along a direction that isparallel to a lengthwise direction of the first gate stack structureaccording to an embodiment of the present disclosure.

FIG. 8A is a vertical cross-sectional view of a first alternativeconfiguration of the first device region of the first exemplarystructure according to an embodiment of the present disclosure.

FIG. 8B is a vertical cross-sectional view of a second alternativeconfiguration of the first device region of the first exemplarystructure according to an embodiment of the present disclosure.

FIG. 8C is a vertical cross-sectional view of a third alternativeconfiguration of the first device region of the first exemplarystructure according to an embodiment of the present disclosure.

FIG. 9A is a vertical cross-sectional view of a fourth alternativeconfiguration of the first device region of the first exemplarystructure according to an embodiment of the present disclosure.

FIG. 9B is a vertical cross-sectional view of a fifth alternativeconfiguration of the first device region of the first exemplarystructure according to an embodiment of the present disclosure.

FIG. 10A is a vertical cross-sectional view of a first device region ofa second exemplary structure after formation of a source-side cavity anda drain-side cavity in the first device region according to anembodiment of the present disclosure.

FIG. 10B is a vertical cross-sectional view of a second device region ofa second exemplary structure after formation of a source-side cavity anda drain-side cavity in the first device region in the second deviceregion according to an embodiment of the present disclosure.

FIG. 11A is a vertical cross-sectional view of the first device regionof the second exemplary structure after formation of a source extensionregion and a drain extension region in the second device regionaccording to an embodiment of the present disclosure.

FIG. 11B is a vertical cross-sectional view of the second device regionof the second exemplary structure after formation of a source extensionregion and a drain extension region in the second device regionaccording to an embodiment of the present disclosure.

FIG. 12A is a vertical cross-sectional view of the first device regionof the second exemplary structure after formation of a dielectric gatespacer and a shallow trench isolation spacer according to an embodimentof the present disclosure.

FIG. 12B is a vertical cross-sectional view of the second device regionof the second exemplary structure after formation of a dielectric gatespacer and a shallow trench isolation spacer according to an embodimentof the present disclosure.

FIG. 13A is a vertical cross-sectional view of the first device regionof the second exemplary structure after covering the second deviceregion with a dielectric cover layer and formation of epitaxialsemiconductor material portions according to an embodiment of thepresent disclosure.

FIG. 13B is a vertical cross-sectional view of the second device regionof the second exemplary structure after covering the second deviceregion with a dielectric cover layer and formation of epitaxialsemiconductor material portions according to an embodiment of thepresent disclosure.

FIG. 14A is a vertical cross-sectional view of the first device regionof the second exemplary structure after formation of a source region anda drain region according to an embodiment of the present disclosure.

FIG. 14B is a vertical cross-sectional view of the second device regionof the second exemplary structure after formation of a source region anda drain region according to an embodiment of the present disclosure.

FIG. 15A is a vertical cross-sectional view of the first device regionof the second exemplary structure after formation of a planarizationdielectric layer and contact via structures according to an embodimentof the present disclosure.

FIG. 15B is another vertical cross-sectional view of the first deviceregion of the second exemplary structure of FIG. 15A along a lengthwisedirection of the gate stack structure according to an embodiment of thepresent disclosure.

FIG. 16A is a vertical cross-sectional view of a first device region ofa third exemplary structure after formation of source extension regionsand drain extension regions according to an embodiment of the presentdisclosure.

FIG. 16B is a vertical cross-sectional view of a second device region ofthe third exemplary structure after formation of source extensionregions and drain extension regions according to an embodiment of thepresent disclosure.

FIG. 17A is a vertical cross-sectional view of the first device regionof the third exemplary structure after formation of dielectric gatespacers and shallow trench isolation spacers according to an embodimentof the present disclosure.

FIG. 17B is a vertical cross-sectional view of the second device regionof the third exemplary structure after formation of dielectric gatespacers and shallow trench isolation spacers according to an embodimentof the present disclosure.

FIG. 18A is a vertical cross-sectional view of the first device regionof the third exemplary structure after covering the second device regionwith a dielectric cover layer and formation of epitaxial semiconductormaterial portions according to an embodiment of the present disclosure.

FIG. 18B is a vertical cross-sectional view of the second device regionof the third exemplary structure after covering the second device regionwith a dielectric cover layer and formation of epitaxial semiconductormaterial portions according to an embodiment of the present disclosure.

FIG. 19A is a vertical cross-sectional view of the first device regionof the third exemplary structure after formation of a source region anda drain region according to an embodiment of the present disclosure.

FIG. 19B is a vertical cross-sectional view of the second device regionof the third exemplary structure after formation of a source region anda drain region according to an embodiment of the present disclosure.

FIG. 20 is a vertical cross-sectional view of the first device region ofthe third exemplary structure after formation of a planarizationdielectric layer and various contact via structures according to anembodiment of the present disclosure.

FIG. 21 is a vertical cross-sectional view of a first device region of afourth exemplary structure after formation of gate stack structuresaccording to an embodiment of the present disclosure.

FIG. 22 is a vertical cross-sectional view of the first device region ofthe fourth exemplary structure after formation of a source extensionregion and a drain extension region according to an embodiment of thepresent disclosure.

FIG. 23 is a vertical cross-sectional view of the first device region ofthe fourth exemplary structure after formation of a dielectric gatespacer and a shallow trench isolation spacer according to an embodimentof the present disclosure.

FIG. 24 is a vertical cross-sectional view of a first device region of afourth exemplary structure after formation of a planarization dielectriclayer according to an embodiment of the present disclosure.

FIG. 25A is a vertical cross-sectional view of the first device regionof the fourth exemplary structure after formation of contact viastructures according to an embodiment of the present disclosure.

FIG. 25B is a partial see-through top-down view of the first deviceregion of the fourth exemplary structure of FIG. 25A.

FIG. 26 is a vertical cross-sectional view of the first device region ofthe fourth exemplary structure after formation of semiconductor pillarstructures according to an embodiment of the present disclosure.

FIG. 27A is a vertical cross-sectional view of the first device regionof the fourth exemplary structure after formation of a source region anda drain region according to an embodiment of the present disclosure.

FIG. 27B is a partial see-through top-down view of the first deviceregion of the fourth exemplary structure of FIG. 27A.

FIG. 28A is a vertical cross-sectional view of the first device regionof the fourth exemplary structure after formation of metallic contactvia structures according to an embodiment of the present disclosure.

FIG. 28B is a partial see-through top-down view of the first deviceregion of the fourth exemplary structure of FIG. 28A.

FIG. 29 is a partial see-through top-down view of a first alternativeconfiguration of the fourth exemplary structure.

FIG. 30A is a vertical cross-sectional view of a second alternativeconfiguration of the fourth exemplary structure along plane A-A′ in FIG.30B.

FIG. 30B is a partial see-through top-down view of a second alternativeconfiguration of the fourth exemplary structure.

FIG. 31A is a vertical cross-sectional view of a third alternativeconfiguration of the fourth exemplary structure along plane A-A′ in FIG.31B.

FIG. 31B is a partial see-through top-down view of the third alternativeconfiguration of the fourth exemplary structure.

FIGS. 32A to 32G illustrate vertical cross-sectional views of the firstdevice region during steps of forming of a fourth alternativeconfiguration of the fourth exemplary structure.

DETAILED DESCRIPTION

Dielectric breakdown can occur at bottom corners of the gate dielectricduring high voltage operation of the field effect transistor.Embodiments of the present disclosure provide high voltage field effecttransistors including vertical current paths and methods of making thesame, the various aspects of which are described below. Increase in thetotal length of the current path in the high voltage field effecttransistors can be advantageously utilized to reduce high voltagebreakdown and allows manufacture of high voltage field effecttransistors within smaller device areas.

The drawings are not drawn to scale. Multiple instances of an elementmay be duplicated where a single instance of the element is illustrated,unless absence of duplication of elements is expressly described orclearly indicated otherwise. Ordinals such as “first,” “second,” and“third” are employed merely to identify similar elements, and differentordinals may be employed across the specification and the claims of theinstant disclosure. The same reference numerals refer to the sameelement or similar element. Unless otherwise indicated, elements havingthe same reference numerals are presumed to have the same composition.As used herein, a first element located “on” a second element can belocated on the exterior side of a surface of the second element or onthe interior side of the second element. As used herein, a first elementis located “directly on” a second element if there exist a physicalcontact between a surface of the first element and a surface of thesecond element.

As used herein, a “layer” refers to a material portion including aregion having a thickness. A layer may extend over the entirety of anunderlying or overlying structure, or may have an extent less than theextent of an underlying or overlying structure. For example, a layer maybe located between any pair of horizontal planes between, or at, a topsurface and a bottom surface of the continuous structure. A layer mayextend horizontally, vertically, and/or along a tapered surface. Asubstrate may be a layer, may include one or more layers therein, and/ormay have one or more layer thereupon, thereabove, and/or therebelow.

As used herein, a “layer stack” refers to a stack of layers. As usedherein, a “line” or a “line structure” refers to a layer that has apredominant direction of extension, i.e., having a direction along whichthe layer extends the most.

As used herein, a “semiconducting material” refers to a material havingelectrical conductivity in the range from 1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cm.As used herein, a “semiconductor material” refers to a material havingelectrical conductivity in the range from 1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cmin the absence of electrical dopants therein, and is capable ofproducing a doped material having electrical conductivity in a rangefrom 1.0 S/cm to 1.0×10⁵ S/cm upon suitable doping with an electricaldopant. As used herein, an “electrical dopant” refers to a p-type dopantthat adds a hole to a valence band within a band structure, or an n-typedopant that adds an electron to a conduction band within a bandstructure. As used herein, a “conductive material” refers to a materialhaving electrical conductivity greater than 1.0×10⁵ S/cm. As usedherein, an “insulator material”, “insulating material” or a “dielectricmaterial” refers to a material having electrical conductivity less than1.0×10⁻⁶ S/cm. As used herein, a “heavily doped semiconductor material”refers to a semiconductor material that is doped with electrical dopantat a sufficiently high atomic concentration to become a conductivematerial, i.e., to have electrical conductivity greater than 1.0×10⁵S/cm. A “doped semiconductor material” may be a heavily dopedsemiconductor material, or may be a semiconductor material that includeselectrical dopants (i.e., p-type dopants and/or n-type dopants) at aconcentration that provides electrical conductivity in the range from1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cm. An “intrinsic semiconductor material”refers to a semiconductor material that is not doped with electricaldopants. Thus, a semiconductor material may be semiconducting orconductive, and may be an intrinsic semiconductor material or a dopedsemiconductor material. A doped semiconductor material can besemiconducting or conductive depending on the atomic concentration ofelectrical dopants therein. As used herein, a “metallic material” refersto a conductive material including at least one metallic elementtherein. All measurements for electrical conductivities are made at thestandard condition.

As used herein, a “field effect transistor” refers to any semiconductordevice having a semiconductor channel through which electrical currentflows with a current density modulated by an external electrical field.As used herein, a “channel region” refers to a semiconductor region inwhich mobility of charge carriers is affected by an applied electricalfield. A “gate electrode” refers to a conductive material portion thatcontrols electron mobility in the channel region by application of anelectrical field. A “source region” refers to a doped semiconductorregion that supplies charge carriers that flow through the channelregion. A “drain region” refers to a doped semiconductor region thatreceives charge carriers supplied by the source region and passesthrough the channel region. An “active region” refers to a source regionof a field effect transistor or a drain region of a field effecttransistor. A “source extension region” refers to a doped semiconductorregion having a lesser dopant concentration than, and having a same typeof doping as, a source region and including a portion disposed betweenthe source region and the channel region. A “drain extension region”refers to a doped semiconductor region having a lesser dopantconcentration than, and having a same type of doping as, a drain regionand including a portion disposed between the drain region and thechannel region. An “active region extension” refers to a sourceextension region or a drain extension region.

Referring to FIGS. 1A-1D, a first exemplary structure according to anembodiment of the present disclosure is illustrated. The first exemplarystructure may include many device regions, which can include a firstdevice region 100 illustrated in FIGS. 1A and 1C and a second deviceregion 200 illustrated in FIGS. 1B and 1D. As used herein, a“semiconductor substrate” refers to a substrate that includes at leastone semiconductor material portion, i.e., at least one portion of asemiconductor material. The semiconductor substrate 10 includes asemiconductor material at least at a top portion thereof. Thesemiconductor substrate 10 may optionally include at least oneadditional material layer at a bottom portion thereof. In oneembodiment, the semiconductor substrate 10 can be a bulk semiconductorsubstrate consisting of a semiconductor material (e.g., single crystalsilicon wafer), or can be a semiconductor-on-insulator (SOI) substrateincluding a buried insulator layer (such as a silicon oxide layer)underlying the semiconductor (e.g., silicon) material portion, and ahandle substrate underlying the buried insulator layer.

The semiconductor substrate 10 can include a lightly doped semiconductormaterial portion on which at least one field effect transistor can beformed. In one embodiment, the entirety of the semiconductor material onthe semiconductor substrate 10 may include the lightly dopedsemiconductor material. In another embodiment, the lightly dopedsemiconductor material can be a semiconductor well embedded withinanother semiconductor material having a different dopant concentrationand optionally, a doping of the opposite conductivity type. The dopantconcentration of the lightly doped semiconductor material portion may beoptimized for a body region of the at least one field effect transistorto be subsequently formed. For example, the lightly doped semiconductormaterial portion may include electrical dopants at an atomicconcentration in a range from 1.0×10¹⁴/cm³ to 1.0×10¹⁸/cm³, such as from1.0×10¹⁵/cm³ to 1.0×10¹⁷/cm³, although lesser and greater atomicconcentrations can also be employed. The conductivity type of theportion of the semiconductor substrate 10 to be subsequently employed asa body region of a field effect transistor is herein referred to as afirst conductivity type, which may be p-type for an n-type field effecttransistor or n-type for a p-type field effect transistor.

The semiconductor material of the semiconductor substrate 10 can be anelemental semiconductor material (such as silicon) or an alloy of atleast two elemental semiconductor materials (such as a silicon-germaniumalloy), or can be a compound semiconductor material (such as a III-Vcompound semiconductor material or a II-VI compound semiconductormaterial), or can be an organic semiconductor material. The thickness ofthe semiconductor substrate 10 can be in a range from 0.5 mm to 2 mm incase the semiconductor substrate 10 is a bulk semiconductor substrate.In case the semiconductor substrate 10 is a semiconductor-on-insulatorsubstrate, the thickness of the top semiconductor material layer withinthe semiconductor substrate 10 may be in a range from 100 nm to 1,000nm, although lesser and greater thicknesses can also be employed.

Pad layers (not shown) such as a stack of a silicon oxide layer and asilicon nitride layer can be deposited over the top surface of thesemiconductor substrate 10, and can be lithographically patterned tocover each device region, i.e., each region in which semiconductordevices are to be subsequently formed. An anisotropic etch process canbe performed to etch shallow trenches that vertically extend through thepad layers and into an upper portion of the semiconductor substrate 10.The photoresist layer can be employed as an etch mask layer during theanisotropic etch process. The depth of the shallow trenches, as measuredfrom the horizontal plane including the top surface of the semiconductorsubstrate 10, can be in a range from 300 nm to 3 microns, althoughlesser and greater depths may also be employed. The shallow trenches canbe interconnected among one another to provide multiple device regionsthat correspond to a respective unetched portion of the semiconductorsubstrate 10. The multiple device regions include the first deviceregion 100 in which a high voltage filed effect transistor issubsequently formed, and the second device region 200 in which a lowvoltage field effect transistor is subsequently formed. It is understoodthat multiple semiconductor devices including filed effect transistorscan be formed on a same semiconductor substrate 10, and the high voltagefield effect transistor formed in the first device region 100 and thelow voltage field effect transistor formed in the second device region200 are only exemplary devices among the entire set of semiconductordevices that can be formed on the semiconductor substrate 10. Thephotoresist layer can be subsequently removed, for example, by ashing.

At least one dielectric material such as undoped silicate glass can bedeposited in the shallow trenches by a conformal deposition process suchas a chemical vapor deposition process. A chemical mechanicalplanarization process can be performed to remove portions of the atleast one dielectric material from above the pad layers. The remainingportions of the at least one dielectric material constitute shallowtrench isolation structures 20. The pad layers can be subsequentlyremoved, for example, by wet etch processes. For example, a wet etchemploying hot phosphoric acid can be performed to remove the siliconnitride layer, and a wet etch process employing dilute hydrofluoric acidcan be performed to remove the silicon oxide layer. Physically exposedsurfaces of the shallow trench isolation structures 20 may becollaterally recessed during removal of the silicon oxide layer.

In one embodiment, the first device region 100 can have a rectangulartop surface, which is a surface of the semiconductor substrate 10. Thelengthwise sides of the rectangular top surface that is parallel to thedirection of horizontal current flow within the first device region 100can be in a range from 600 nm to 10 microns, such as from 1.2 microns to5 microns, although lesser and greater dimensions may also be employed.The widthwise sides of the rectangular top surface that is perpendicularto the direction of horizontal current flow within the first deviceregion 100 can be in a range from 300 nm to 20 microns, such as from 600nm to 10 microns, although lesser and greater dimensions may also beemployed. The second device region 200 can have a rectangular topsurface, and the dimensions for the rectangular top surface may besuitably selected.

Generally, a shallow trench isolation structure 20 comprising adielectric material can be formed in an upper region of thesemiconductor material layer (e.g., a doped well or an epitaxialsemiconductor layer) of the semiconductor substrate 10. Thesemiconductor material layer can have a doping of the first conductivitytype, and the shallow trench isolation structure 20 can laterallysurround each device region of the semiconductor material layer such asthe first device region 100 and the second device region 200.

Referring to FIGS. 2A and 2B, gate dielectric layers (50L, 250L) can beformed over the top surface of the semiconductor substrate 10. Forexample, a first gate dielectric layer 50L having a thickness suitablefor operation of a high voltage field effect transistor can be formed onall physically exposed surfaces of the semiconductor substrate 10, forexample, by thermal oxidation of the physically exposed surface portionsof the semiconductor substrate 10. If the semiconductor substrate 10includes single crystalline silicon, the first gate dielectric layer canconsist essentially of thermal silicon oxide. The thickness of the firstgate dielectric layer 50L can be in a range from 6 nm to 30 nm, althoughlesser and greater thicknesses can also be employed.

A photoresist layer (not shown) can be applied over the first exemplarystructure, and can be lithographically patterned to cover the firstdevice region 100 without covering the second device region 200. Anisotropic etch process such as a wet etch process employing dilutehydrofluoric acid can be performed to remove the portion of the firstgate dielectric layer 50L located in the second device region 200. Thephotoresist layer can be subsequently removed, for example, by ashing.

A second gate dielectric layer 250L can be formed in the second deviceregion 200. For example, a thermal oxidation process may be performed toconvert a surface portion of the semiconductor substrate 10 in thesecond device region 200 into the second gate dielectric layer 250L.Optionally, a dielectric metal oxide layer may be deposited and may beincorporated into the second gate dielectric layer 250L. Any portion ofthe gate dielectric material that is formed on the first gate dielectriclayer 50L during formation of the second gate dielectric layer 250L isincorporated into the second gate dielectric layer 250L. Generally, thefirst gate dielectric layer 50L has a thickness (such as a thickness ina range from 6 nm to 30 nm) that is suitable for operation of a highvoltage field effect transistor, and the second gate dielectric layer250L has a thickness that is suitable for operation of a low voltagefield effect transistor. The second gate dielectric layer 250L isthinner than the first gate dielectric layer 50L. In an illustrativeexample, the second gate dielectric layer 250L can have a thickness in arange from 1 nm to 4 nm, although lesser and greater thicknesses mayalso be employed. In an alternative embodiment, the second gatedielectric layer 250L is formed first in both first and second deviceregions (100, 200), followed by forming a mask over the second gatedielectric layer 250L in the second device region 200 and furtheroxidizing the exposed semiconductor substrate 10 in the first deviceregion 100 to increase the thickness of the second gate dielectric layer250L exposed in the first device region 100 to form the first gatedielectric layer 50L.

Referring to FIGS. 3A and 3B, at least one gate electrode material layerand a gate cap dielectric layer can be deposited over the first gatedielectric layer 50L and the second gate dielectric layer 250L. The atleast one gate electrode material layer includes one or more layers ofan electrically conductive material that can be employed as a gateelectrode material. In an illustrative embodiment, the at least one gateelectrode material layer can include a semiconductor gate electrodelayer including a doped semiconductor material and a metallic gateelectrode layer including a metallic gate electrode material. Forexample, the semiconductor gate electrode layer can include a dopedpolysilicon layer having a thickness in a range from 30 nm to 150 nm,and the metallic gate electrode layer can include a metallic materialsuch as a transition metal or metal silicide and can have a thickness ina range from 50 nm to 150 nm, although lesser and greater thicknessesmay also be employed. The gate cap dielectric layer includes a gate capdielectric material such as silicon nitride, and can have a thickness ina range from 30 nm to 100 nm, although lesser and greater thicknessesmay also be employed.

A photoresist layer can be applied over the gate cap dielectric layer,and can be lithographically patterned to form gate patterns, i.e.,patterns of gate electrodes to be subsequently formed. In oneembodiment, the gate patterns can cover middle portions of the deviceregions such as a middle portion of the first device region 100 and amiddle portion of the second device region 200. An anisotropic etchprocess can be performed to transfer the gate patterns through the gatecap dielectric layer, the at least one gate electrode layer, the firstgate dielectric layer SOL, and the second gate dielectric layer 250L. Aterminal step of the anisotropic etch process can be selective to thesemiconductor material of the semiconductor substrate 10 so thatoveretch into the semiconductor substrate 10 is minimized. Thephotoresist layer can be removed, for example, by ashing.

Each patterned portion of the gate cap dielectric layer comprises a gatecap dielectric 58. Each patterned portion of the at least one gateelectrode layer comprises a gate electrode (52, 54). In case the atleast one gate electrode layer includes a semiconductor gate electrodelayer and a metallic gate electrode layer, each gate electrode (52, 54)can include a respective stack of a semiconductor gate electrode 52 anda metallic gate electrode 54. A patterned portion of the first gatedielectric layer SOL formed in the first device region 100 includes afirst gate dielectric 50, and a patterned portion of the second gatedielectric layer 250L formed in the second device region 200 includes asecond gate dielectric 250. The contiguous set of material portionsincluding the first gate dielectric 50, a semiconductor gate electrode52, a metallic gate electrode 54, and a gate cap dielectric 58 in thefirst device region 100 comprises a first gate stack structure (50, 52,54, 58). The continuous set of material portions including the secondgate dielectric 250, a semiconductor gate electrode 52, a metallic gateelectrode 54, and a gate cap dielectric 58 in the second device region200 comprises a second gate stack structure (250, 52, 54, 58). Thelateral dimension between two edges of the first gate dielectric 50 thatcontact the semiconductor substrate 10 in the first device region 100 isthe first gate length of the first gate stack structure (50, 52, 54,58), which can be in a range from 200 nm to 3,000 nm, although lesserand greater dimensions may also be employed. The lateral dimensionbetween two edges of the second gate dielectric 250 that contact thesemiconductor substrate 10 in the second device region 200 is the secondgate length of the second gate stack structure (250, 52, 54, 58), whichcan be in a range from 5 nm to 100 nm, although lesser and greaterdimensions may also be employed.

Referring to FIGS. 4A and 4B, a photoresist layer 57 can be applied overthe first exemplary structure, and can be lithographically patterned tocover the second device region 200 without covering the first deviceregion 100. According to an aspect of the present disclosure, ananisotropic etch process can be performed to vertically recess thesemiconductor material of the semiconductor substrate 10 selective tothe dielectric materials of the gate cap dielectric 58 and the shallowtrench isolation structure 20. Anisotropic etching of a semiconductormaterial can be effected, for example, by a Bosch process employingsulfur hexafluoride or by a reactive ion etch process employing acombination of nitrogen trifluoride, halofluorocarbon, and optionally aninert gas (such as argon). Physically exposed portions of the topsurface of the semiconductor substrate 10 can be vertically recessed toform a source-side cavity 29S on one side of the first gate stackstructure (50, 52, 54, 58) and a drain-side cavity 29D on an oppositeside of the first gate stack structure (50, 52, 54, 58).

The shallow trench isolation structure 20 comprises a dielectricmaterial and is embedded within a semiconductor material layer of thesemiconductor substrate 10. The shallow trench isolation structure 20laterally surrounds a first upper portion of the semiconductor materiallayer in the first device region 100, and laterally surrounds a secondupper portion of the semiconductor material layer. A pair of recessedhorizontal surfaces of a remaining portion of the semiconductorsubstrate 10 can be formed at the bottom of the source-side cavity 29Sand the drain-side cavity 29D in the first device region 100. The firstdevice region 100 of the semiconductor material layer includes a basesemiconductor portion 30B comprising the pair of top horizontal surfaces31 that are recessed below a bottom surface of the first gate dielectric50 and a pedestal semiconductor portion 30P located between the pair oftop horizontal surfaces 31 and the bottom surface of the gate dielectric50.

Thus, the first upper portion of the semiconductor material layer in thefirst device region 100 comprises the base semiconductor portion 30Bcomprising a pair of top horizontal surfaces 31 and the pedestalsemiconductor portion 30P located between the pair of top horizontalsurfaces 31 and vertically protruding above a horizontal plane HPincluding the pair of top horizontal surfaces 31. The base semiconductorportion 30B can be located between the horizontal plane including thebottom surface of the shallow trench isolation structure 20 and thehorizontal plane HP including the pair of top horizontal surfaces 31 ofthe base semiconductor portion 30B.

A horizontal interface between the first gate dielectric 50 and thepedestal semiconductor portion 30P is located above the horizontal planeHP including the pair of top horizontal surfaces 31 of the basesemiconductor portion 30B. In one embodiment, a vertical distancebetween the horizontal interface between the first gate dielectric 50and the pedestal semiconductor portion 30P and the horizontal plane HPincluding the pair of top horizontal surfaces 31 of the basesemiconductor portion 30B can be in a range from 100 nm to 2 microns,and may be in a range from 300 nm to 1,000 nm, although lesser andgreater vertical distances may also be employed.

In one embodiment, a top periphery of the pedestal semiconductor portion30P comprises a pair of first edges that coincide with a pair of edgesof the first gate dielectric 50 and a pair of second edges that areadjoined to the shallow trench isolation structure 20 (outside thevertical plane of FIG. 4A and not shown in FIG. 4A). In one embodiment,the pair of top horizontal surfaces 31 of the base semiconductor portion30B are adjoined to sidewalls of the shallow trench isolation structure20. In one embodiment, the base semiconductor portion 30B comprises afirst single crystalline semiconductor material (e.g., silicon) portionhaving a doping of the first conductivity type, and the pedestalsemiconductor portion 30P comprises a second single crystallinesemiconductor material (e.g., silicon) potion having a doping of thefirst conductivity type. In one embodiment, the first base semiconductorportion 30B and the pedestal semiconductor portion 30P can have the samematerial composition and can be epitaxially aligned to each other.

In one embodiment, the pedestal semiconductor portion 30P can have apair of sidewalls that are each physically exposed to the source-sidecavity 29S or to the drain-side cavity 29D, and are laterally spacedapart from each other by a uniform lateral spacing, which can be thesame as the gate length. In one embodiment, the pair of sidewalls of thepedestal semiconductor portion 30P can be vertically coincident withoverlying sidewalls of the first gate stack structure (50, 52, 54, 58).As used herein, a first surface and a second surface are “verticallycoincident” if the second surface overlies or underlies the firstsurface and if there exists a vertical plane including the first surfaceand the second surface. Generally, the pedestal semiconductor portion30P can comprise a pair of sidewalls that are vertically coincident withsidewalls of the first gate stack structure (50, 52, 54, 58). Thephotoresist layer 57 can be subsequently removed, for example, byashing.

Referring to FIGS. 5A and 5B, at least one doped extension region (32S,32D) having a doping of a second conductivity type that is the oppositeof the first conductivity type can be formed underneath at least onesidewall of the pedestal semiconductor portion 30P in the first deviceregion 100. In one embodiment, the at least one doped extension region(32S, 32D) formed in the first device region 100 can include a sourceextension region 32S and a drain extension region 32D. Generally,dopants of the second conductivity type can be introduced into thephysically exposed portions of the semiconductor material layer in thesemiconductor substrate 10. For example, at least one ion implantationprocess and/or at least one plasma doping may be employed to introducedopants of the second conductivity type into surface portions of thesemiconductor material layer in the semiconductor substrate 10. In casep-type transistors and n-type transistors are formed on thesemiconductor substrate 10, masked ion implantation processes may beemployed to implant dopants of different conductivity type intodifferent field effect transistors.

For example, multiple instances of the first device region 100 can beformed on the semiconductor substrate 10 such that a first subset of thefirst device regions 100 includes p-type doped portions of thesemiconductor substrate 10 (so that the first conductivity type isp-type for the first subset) and a second subset of the first deviceregions 100 includes n-type doped portions of the semiconductorsubstrate 10 (so that the first conductivity type is n-type for thesecond subset). For each first device region 100 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source extension region 32S and arespective drain extension region 32D. For each second device region 200having a doping of a respective first conductivity type, dopants of arespective second conductivity type that is the opposite of the firstconductivity type can be implanted to form a respective source extensionregion 232S and a respective drain extension region 232D. The sourceextension regions (32S, 232S) and the drain extension regions (32D,232D) of different field effect transistors may, or may not, have thesame atomic concentration of dopants. Thus, one or more masked ionimplantation processes may be employed to provide dopants of arespective second conductivity type at a target atomic concentrationwithin each of the source extension regions (32S, 232S) and the drainextension regions (32D, 232D).

Generally, each source extension region 32S and each drain extensionregion 32D can include dopants of a respective second conductivity typeat an atomic concentration that is less than the atomic concentration ofdopants to be employed in source regions and drain regions to besubsequently formed to prevent breakdown of field effect transistorsduring operation. For example, each source extension region 32S and eachdrain extension region 32D can include dopants of a respective secondconductivity type at an atomic concentration in a range from1.0×10¹⁷/cm³ to 1.0×10²⁰/cm³, such as from 1.0×10¹⁸/cm³ to 1.0×10¹⁹/cm³,although lesser and greater atomic concentrations can also be employed.The extension regions 232S and 232D in the second device region 200 mayhave the same concentration of dopants of the second conductivity type.

In one embodiment, angled ion implantation processes may be employed todope surface portions of the pedestal semiconductor portion 30P thatunderlie the physically exposed sidewalls of the pedestal semiconductorportion 30P, i.e., the sidewalls of the pedestal semiconductor portion30P that are physically exposed to the source-side cavity 29S or to thedrain-side cavity 29D. The thickness of the horizontally-extendingportions of the source extension region 32S and the drain extensionregion 32D in each first device region 100 may be in a range from 10 nmto 200 nm, although lesser and greater thicknesses may also be employed.The width of the vertically-extending portions of the source extensionregion 32S and the drain extension region 32D in each first deviceregion 100 may be in a range from 10 nm to 200 nm, although lesser andgreater thicknesses may also be employed. A single crystallinesemiconductor material potions having a doping of the first conductivitytype is located within the pedestal semiconductor portion 30P. Eachinterface between the at least one doped extension region (32S, 32DS)and the single crystalline semiconductor material portion within thepedestal semiconductor portion 30P comprises a p-n junction that isparallel to one of the pair of sidewalls of the pedestal semiconductorportion 30P and is adjoined to a bottom surface of the first gatedielectric 50.

Referring to FIGS. 6A-6D, a conformal dielectric material layerincluding a dielectric material such as silicon oxide can be deposited,for example, by a chemical vapor deposition process. The thickness ofthe conformal dielectric material layer can be in a range from 30 nm to300 nm, although lesser and great thicknesses may also be employed. Theconformal dielectric layer can be anisotropically etched by performed ananisotropic etch process such as a reactive ion etch process. A firstdielectric gate spacer 56 is formed around the first gate stackstructure (50, 52, 54, 58) in the first device region 100, and a seconddielectric gate spacer 256 is formed around the second gate stackstructure (250, 52, 54, 58) in the second device region 200. The firstdielectric gate spacer 56 can be formed on a pair of sidewalls of thefirst gate stack structure (50, 52, 54, 58) and on a pair of sidewallsof the pedestal semiconductor portion 30P that are vertically coincidentwith the pair of sidewalls of the first gate stack structure (50, 52,54, 58). The width of the first dielectric gate spacer 56 and the seconddielectric gate spacer 256 can be in a range from 20 nm to 400 nm, suchas from 40 nm to 200 nm, although lesser and greater widths can also beemployed.

A remaining portion of the conformal dielectric material layer in thefirst device region 100 comprises a first shallow trench isolationspacer 66 that comprises a same insulating material as the firstdielectric gate spacer 56 and the second dielectric gate spacer 256. Thefirst shallow trench isolation spacer 66 contacts sidewalls of theshallow trench isolation structure 20 and peripheral potions of the pairof top horizontal surfaces 31 of the base semiconductor portion 30B. Thefirst shallow trench isolation spacer 66 is adjoined to the firstdielectric gate spacer 56 as shown in FIG. 6C.

Dopants of the second conductivity type can be implanted into portionsof the semiconductor substrate 10 that are not masked by the gate stackstructures (50, 250, 52, 54, 58), the dielectric gate spacers (56, 256),the shallow trench isolation spacers 66, or the shallow trench isolationstructures 20 to form source regions (34S, 234S) and drain regions (34D,234D). For example, at least one ion implantation process may beemployed to introduce dopants of the second conductivity type intounmasked surface portions of the semiconductor material layer in thesemiconductor substrate 10. In case p-type transistors and n-typetransistors are formed on the semiconductor substrate 10, masked ionimplantation processes may be employed to implant dopants of differentconductivity type into different field effect transistors.

For example, multiple instances of the first device region 100 can beformed on the semiconductor substrate 10 such that a first subset of thefirst device regions 100 includes p-type doped portions of thesemiconductor substrate 10 (so that the first conductivity type isp-type for the first subset) and a second subset of the first deviceregions 100 includes n-type doped portions of the semiconductorsubstrate 10 (so that the first conductivity type is n-type for thesecond subset). For each first device region 100 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source region 34S and a respectivedrain region 34D. For each second device region 200 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source region 234S and arespective extension region 234D. The source regions (34S, 234S) and thedrain regions (34D, 234D) of different field effect transistors may, ormay not, have the same atomic concentration of dopants. Thus, one ormore masked ion implantation processes may be employed to providedopants of a respective second conductivity type at a target atomicconcentration within each of the source regions (34S, 234S) and thedrain regions (34D, 234D).

Generally, each source region (34S, 234S) and each drain region (34D,234D) can include dopants of a respective second conductivity type at anatomic concentration that is greater than the atomic concentration ofdopants in the source extension regions (32S, 232S) and the drainextension regions (32D, 232D). For example, each source region (34S,234S) and each drain region (34D, 234D) can include dopants of arespective second conductivity type at an atomic concentration in arange from 5.0×10¹⁸/cm³ to 2.0×10²¹/cm³, such as from 1.0×10²⁰/cm³ to1.0×10²¹/cm³, although lesser and greater atomic concentrations can alsobe employed.

Due to the lateral straggle of implanted dopants of the secondconductivity type, the source regions (34S, 234S) and the drain regions(34D, 234D) can contact bottom surfaces of the respective dielectricgate spacers (56, 256) and bottom surfaces of the shallow trenchisolation spacers 66. The thickness of the source region (34S, 234S) andthe drain region (34D, 234D) may be in a range from 50 nm to 1,000 nm,although lesser and greater thicknesses may also be employed. A singlecrystalline semiconductor material potions having a doping of the firstconductivity type is located within the base semiconductor portion 30Bin the first device region 100. Each interface between the source anddrain regions (34S, 34D) and the single crystalline semiconductormaterial portion within the base semiconductor portion 30B in a firstdevice region 100 comprises a p-n junction that includes a horizontalplane and a non-horizontal peripheral interface.

Generally, a source region 34S and a drain region 34D can be formedwithin upper portions of the base semiconductor portion 30B by dopingregions of the base semiconductor portion 30B that underlies the pair oftop horizontal surfaces 31 with dopants of the second conductivity typethat is an opposite of the first conductivity type in each first deviceregion 100. Each doped extension region (32S, 32D) is adjoined to arespective one of the source region 34S and the drain region 34D uponformation of the source region 34S and the drain region 34D in the firstdevice region 100.

Referring to FIGS. 7A-7C, a dielectric liner 62 can be conformallydeposited over the top surface of each source region (34S, 234S), thetop surface of each drain region (34D, 234D), an outer sidewall of eachdielectric gate spacer (56, 256), and a top surface of each gate stackstructure (50, 250, 52, 54, 58). The dielectric liner 62 can include adielectric diffusion barrier material, such as silicon nitride. In oneembodiment, the dielectric liner 62 may include a stress-inducingsilicon nitride material that can induce tensile stress or compressstress in the channel regions, i.e., portions of the semiconductorsubstrate 10 that underlie a gate dielectric (50 or 250). The dielectricliner 62 can be deposited by a conformal deposition process such as achemical vapor deposition process. The thickness of the dielectric liner62 can be in a range from 5 nm to 100 nm, such as from 10 nm to 50 nm,although lesser and greater thicknesses may also be employed.

A planarization dielectric layer 70 can be formed over the dielectricliner 62. The planarization dielectric layer 70 can include aself-planarizing dielectric material such as flowable oxide (FOX) or aplanarizable dielectric material such as undoped silicate glass or adoped silicate glass. In case the planarization dielectric layer 70includes undoped silicate glass or a doped silicate glass, a top surfaceof the planarization dielectric layer 70 can be planarized by performinga chemical mechanical planarization process. The top surface of theplanarization dielectric layer 70 may be vertically spaced above thetopmost surface of the dielectric liner 62 by a vertical distance in arange from 100 nm to 1,000 nm, such as from 200 nm to 500 nm, althoughlesser and greater vertical spacings may also be employed.

Via cavities can be formed through the planarization dielectric layer 70and the dielectric liner 62 on each of the source regions (34S, 234S),the drain regions (34D, 234D), and the gate electrodes (52, 54). Forexample, a photoresist layer (not shown) can be applied over theplanarization dielectric layer 70, and can be lithographically patternedto form discrete openings in areas that overlie the source regions, thedrain regions, and the gate electrodes (52, 54). An anisotropic etchprocess can be performed to transfer the pattern of the openings in thephotoresist layer through the planarization dielectric layer 70 and thedielectric liner 62. Surfaces of the source regions, the drain regions,and the gate electrodes (52, 54) are physically exposed underneath thevia cavities. The photoresist layer can be subsequently removed, forexample, by ashing.

At least one conductive material can be deposited in the via cavities toform various contact via structures (88S, 88D, 88G). For example, ametallic liner (such as a conductive metal nitride liner including TiN,TaN, or WN) and a metallic fill material (such as W, Ti, Co, Cu, Ru, orAl) may be sequentially deposited in the via cavities, and excessportions of the metallic liner and the metallic fill material can beremoved from above the planarization dielectric layer 70 by aplanarization process such as chemical mechanical planarization or arecess etch. Each contiguous set of remaining conductive materialportions constitutes a contact via structure (88S, 88D, or 88G). Forexample, the contact via structures (88S, 88D, 88G) can include a sourcecontact via structure 88S (i.e., source electrode) that includes asource metallic liner 81S and a source metallic fill material portion83S, a drain contact via structure 88D (i.e., drain electrode) thatincludes a drain metallic liner 81D and a drain metallic fill materialportion 83D, and a gate contact via structure 88G (i.e., gate contact)that includes a gate metallic liner 81G and a gate metallic fillmaterial portion 83G. The source contact via structure 88S contacts atop surface of a source region (34S, 234S), the drain contact viastructure 88D contacts a top surface of a drain region (34D, 234D), anda gate contact via structure 88G contacts a top surface of a gateelectrode (52, 54).

Referring to FIG. 8A, a first alternative configuration of the firstdevice region 100 of the first exemplary structure can be derived fromthe first device region 100 of the first exemplary structure by omittingformation of a drain extension region 32D at the processing steps ofFIGS. 5A and 5B. For example, the first device region 100 can be tiltedsuch that implanted ions of the second conductivity type are implantedonly on the side of the source-side cavity 29S and not on the side ofthe drain-side cavity 29D. The tilt angle of the direction of theimplanted ions relative to the vertical direction of the first exemplarystructure may be in a range from 20 degrees to 80 degrees, such as from30 degrees to 60 degrees, although lesser and greater tilt angles canalso be employed. In this case, a sidewall of a single crystallinesemiconductor material portion in the pedestal semiconductor portion 30Pcan contact an inner sidewall of the first dielectric gate spacer 56 inthe first device region 100.

Referring to FIG. 8B, a second alternative configuration of the firstdevice region 100 of the first exemplary structure can be derived fromthe first device region 100 of the first exemplary structure by omittingformation of a source extension region 32S at the processing steps ofFIGS. 5A and 5B. For example, the first device region 100 can be tiltedsuch that implanted ions of the second conductivity type are implantedonly on the side of the drain-side cavity 29D and not on the side of thesource-side cavity 29S. The tilt angle of the direction of the implantedions relative to the vertical direction of the first exemplary structuremay be in a range from 20 degrees to 80 degrees, such as from 30 degreesto 60 degrees, although lesser and greater tilt angles can also beemployed. In this case, a sidewall of a single crystalline semiconductormaterial portion in the pedestal semiconductor portion 30P can contactan inner sidewall of the first dielectric gate spacer 56 in the firstdevice region 100.

Referring to FIG. 8C, a third alternative configuration of the firstdevice region 100 of the first exemplary structure can be derived fromthe first device region 100 of the first exemplary structure by omittingformation of a source extension region 32S and a drain extension region32D at the processing steps of FIGS. 5A and 5B. In this case, the firstdevice region 100 can be covered with an ion implantation mask (such asa patterned photoresist layer) during formation of a source extensionregion 232S and a drain extension region 232D in the second deviceregion 200. In this case, a pair of sidewalls of a single crystallinesemiconductor material portion in the pedestal semiconductor portion 30Pcan contact a pair of inner sidewalls of the first dielectric gatespacer 56 in the first device region 100.

Referring to FIG. 9A, a fourth alternative configuration of the firstdevice region 100 of the first exemplary structure can be derived fromthe first device region 100 illustrated in FIGS. 7A-7C by increasing thedepth of the source-side cavity 29S and the drain-side cavity 29D at theprocessing steps of FIGS. 5A and 5B. In one embodiment, a verticaldistance between the horizontal interface between the first gatedielectric 50 and the pedestal semiconductor portion 30P and thehorizontal plane HP including the pair of top horizontal surfaces 31 ofthe base semiconductor portion 30B can be in a range from 500 nm to 2microns, and may be in a range from 600 nm to 900 nm, although lesserand greater vertical distances may also be employed.

Referring to FIG. 9B, a fifth alternative configuration of the firstdevice region 100 of the first exemplary structure by omitting formationof at least one doped extension region (32S, 32D). In one embodiment,the source extension region 32S and the drain extension region 32D canbe omitted from the first device region 100. In one embodiment, thesource extension region 32S may be omitted, and the drain extensionregion 32D may be present. In one embodiment, the source extensionregion 32S may be present, and the drain extension region 32D may beomitted.

Referring to FIGS. 1A-9B and according to various embodiments of thepresent disclosure, a semiconductor structure is provided, whichcomprises: a shallow trench isolation structure 20 comprising adielectric material embedded within a semiconductor material layer(e.g., a well in or an epitaxial layer in the semiconductor substrate10) and laterally surrounding an upper portion of the semiconductormaterial layer, wherein the upper portion of the semiconductor materiallayer comprises a base semiconductor portion 30B comprising a pair oftop horizontal surfaces 31 and a pedestal semiconductor portion 30Plocated between the pair of top horizontal surfaces 31 and verticallyprotruding above a horizontal plane HP including the pair of tophorizontal surfaces; a gate stack structure (50, 52, 54, 58) comprisinga gate dielectric 50 and a gate electrode (52, 54) and including a pairof sidewalls that are vertically coincident with a pair of sidewalls ofthe pedestal semiconductor portion 30P; a dielectric gate spacer 56contacting the pair of sidewalls of the gate stack structure (50, 52,54, 58) and the pair of sidewalls of the pedestal semiconductor portion30P; and a source region 34S and a drain region 34D located within thebase semiconductor portion 30B and having a respective top surfacelocated within the horizontal plane HP including the pair of tophorizontal surfaces of the base semiconductor portion 30B.

In one embodiment, a horizontal interface between the gate dielectric 50and the pedestal semiconductor portion 30P is located above thehorizontal plane HP including the pair of top horizontal surfaces 31 ofthe base semiconductor portion 30B. In one embodiment, a verticaldistance between the horizontal interface between the gate dielectric 50and the pedestal semiconductor portion 30P and the horizontal plane HPincluding the pair of top horizontal surfaces 31 of the basesemiconductor portion 30B is in a range from 100 nm to 2 microns.

In one embodiment, the semiconductor structure comprises a shallowtrench isolation spacer 66 that comprises a same insulating material asthe dielectric gate spacer 56, adjoined to the dielectric gate spacer56, and contacts sidewalls of the shallow trench isolation structure 20that are located above the horizontal plane HP including the pair of tophorizontal surfaces 31 of the base semiconductor portion 30B.

In one embodiment, a top surface of the source region 34S contacts abottom portion of a first segment of the dielectric gate spacer 56within the horizontal plane HP including the pair of top horizontalsurfaces 31 of the base semiconductor portion 30B; and a top surface ofthe drain region 34D contacts a bottom surface of a second segment ofthe dielectric gate spacer 56 within the horizontal plane HP includingthe pair of top horizontal surfaces 31 of the base semiconductor portion30B. In one embodiment, a top periphery of the pedestal semiconductorportion 30P comprises: a pair of first edges that coincide with a pairof edges of the gate dielectric 50; and a pair of second edges that areadjoined to the shallow trench isolation structure 20. In oneembodiment, the pair of top horizontal surfaces 31 of the basesemiconductor portion 30B are adjoined to sidewalls of the shallowtrench isolation structure 20.

In one embodiment, the semiconductor structure comprises: a dielectricliner 62 continuously extending over, and contacting, a top surface ofthe source region 34S, a top surface of the drain region 34D, an outersidewall of the dielectric gate spacer 56, and a top surface of the gatestack structure (50, 52, 54, 58); a planarization dielectric layer 70overlying the dielectric liner 62 and having a planar top surface; andcontact via structures (88S, 88D, 88G) vertically extending through theplanarization dielectric layer 70 and the dielectric liner 62 andcontacting a respective one of the source region 34S, the drain region34D, and the gate electrode (52, 54).

In one embodiment, the base semiconductor portion 30B comprises a firstsingle crystalline semiconductor material portion having a doping of thefirst conductivity type; the source region 34S and the drain region 34Dhave a doping of a second conductivity type that is an opposite of thefirst conductivity type; and the pedestal semiconductor portion 30Pconsists of a second single crystalline semiconductor material potionhaving a doping of the first conductivity type as illustrated in FIGS.8C and 9B. In one embodiment, the first single crystalline semiconductormaterial portion and the second single crystalline semiconductormaterial portion have a same material composition and are epitaxiallyaligned to each other.

In one embodiment, the base semiconductor portion 30B comprises a firstsingle crystalline semiconductor material portion having a doping of thefirst conductivity type; the source region 34S and the drain region 34Dhave a doping of a second conductivity type that is an opposite of thefirst conductivity type; and the pedestal semiconductor portion 30Pcomprises of a second single crystalline semiconductor material potionhaving a doping of the first conductivity type and at least one dopedextension region (32S, 32D) having a doping of the second conductivitytype and adjoined to a respective one of the source region 34S and thedrain region 34D as illustrated in FIGS. 7A, 8A, 8B, and 9A. In oneembodiment, each of the at least one doped extension region (32S, 32D)has a uniform lateral width and contacts a surface segment of thedielectric gate spacer 56. In one embodiment, each interface between theat least one doped extension region (32S, 32D) and the second singlecrystalline semiconductor material potion (which has a doping of a firstconductivity type and is located within the pedestal semiconductorportion 30P) comprises a p-n junction that is parallel to one of thepair of sidewalls of the pedestal semiconductor portion 30P and isadjoined to a bottom surface of the gate dielectric 50.

Referring to FIGS. 10A and 10B, a second exemplary structure accordingto an embodiment of the present disclosure can be the same as the firstexemplary structure illustrated in FIGS. 4A and 4B. Generally, the areasof the first device region 100 are vertically recessed employing thefirst gate stack structure (50, 52, 54, 58) as an etch mask. Thepedestal semiconductor portion 30P comprises a pair of sidewalls thatare vertically coincident with sidewalls of the first gate stackstructure (50, 52, 54, 58).

Referring to FIGS. 11A and 11B, a photoresist layer 47 can be appliedover the second exemplary structure, and can be lithographicallypatterned to cover the first device region 100 without covering thesecond device region 200. Dopants of the second conductivity type can beimplanted into unmasked surface portions of the semiconductor substrate10 in the second device region 200 to form a source extension region232S and a drain extension region 232D. The processing steps of FIGS. 5Aand 5B may be performed while the patterned photoresist layer 47 coversthe first device region 100 and prevents formation of any dopedextension region in the first device region 100. Subsequently, thephotoresist layer 47 can be removed, for example, by ashing.

Referring to FIGS. 12A and 12B, the processing steps of FIGS. 6A and 6Bcan be performed to form dielectric gate spacers (56, 256) and shallowtrench isolation spacers 66. For example, a conformal dielectricmaterial layer including a dielectric material such as silicon oxide canbe deposited, and can be subsequently etched by performing ananisotropic etch process, such as a reactive ion etch process. A firstdielectric gate spacer 56 is formed around the first gate stackstructure (50, 52, 54, 58) in the first device region 100, and a seconddielectric gate spacer 256 is formed around the second gate stackstructure (250, 52, 54, 58) in the second device region 200. The firstdielectric gate spacer 56 can be formed on a pair of sidewalls of thefirst gate stack structure (50, 52, 54, 58) and on a pair of sidewallsof the pedestal semiconductor portion 30P that are vertically coincidentwith the pair of sidewalls of the first gate stack structure (50, 52,54, 58). The width of the first dielectric gate spacer 56 and the seconddielectric gate spacer 256 can be in a range from 20 nm to 400 nm, suchas from 40 nm to 20 nm, although lesser and greater widths can also beemployed.

A remaining portion of the conformal dielectric material layer in thefirst device region 100 comprises a first shallow trench isolationspacer 66 that comprises a same insulating material as the firstdielectric gate spacer 56 and the second dielectric gate spacer 256. Thefirst shallow trench isolation spacer 66 contacts sidewalls of theshallow trench isolation structure 20 and peripheral potions of the pairof top horizontal surfaces 31 of the base semiconductor portion 30B. Thefirst shallow trench isolation spacer 66 is adjoined to the firstdielectric gate spacer 56.

Referring to FIGS. 13A and 13B, a dielectric cover layer 260 can beconformally deposited over the second exemplary structure, and can belithographically patterned to cover the second device region 200 withoutcovering the first device region 100. The dielectric cover layer 260includes a dielectric material, such as silicon oxide or siliconnitride. The thickness of the dielectric cover layer 260 may be in arange from 10 nm to 50 nm, although lesser and greater thicknesses mayalso be employed.

A selective semiconductor deposition process can be performed to deposita single crystalline or polycrystalline semiconductor material (e.g.,single crystal silicon or polysilicon) from each physically exposedsurface of the semiconductor substrate 10. Particularly, a singlecrystalline or polycrystalline semiconductor material is deposited oneach physically exposed portion of the top horizontal surfaces 31 of thebase semiconductor portion 30B in the first device region 100. Thedielectric cover layer 260 prevents deposition of a semiconductormaterial over the second device region 200.

In one embodiment, the selective semiconductor deposition process maycomprise a selective epitaxy process that grows single crystallinesemiconductor materials from physically exposed semiconductor surfacessuch as the physically exposed portions of the top horizontal surfaces31 of the base semiconductor portion 30B in the first device region 100.In this case, the second exemplary structure can be placed within avacuum enclosure of a selective epitaxy process chamber, and a precursorgas for depositing a semiconductor material and an etchant gas can besimultaneously or alternately flowed into the vacuum enclosure to effectthe selective semiconductor deposition process. The precursor gas mayinclude, for example, silane, disilane, dichlorosilane, trichlorosilane,germane, digermane, and/or other semiconductor precursor gases known inthe art. The etchant gas may include, for example, gas phase hydrogenchloride. Epitaxial semiconductor material portions can grow from thephysically exposed portions of the top horizontal surfaces 31 of thebase semiconductor portion 30B in the first device region 100.

In one embodiment, a pair of epitaxial semiconductor material portionscan be formed by growing a single crystalline semiconductor material(e.g., single crystal silicon) from the pair of top horizontal surfaces31 of the base semiconductor portion 30B in the first device region 100.In one embodiment, the epitaxial semiconductor material portions canhave a doping of an opposite conductivity type from that of the basesemiconductor portion 30B, i.e., a doping of the second conductivitytype. In this case, the single crystalline semiconductor material can begrown with in-situ doping with dopants of the second conductivity type.In one embodiment, the entirety of the base semiconductor portion 30Band the pedestal semiconductor portion 30P can have a doping of thefirst conductivity type during formation of the pair of epitaxialsemiconductor material portions. The epitaxial semiconductor materialportions can function as extensions of a body region, and are hereinreferred to as extension regions (35S, 35D). The extension regions (35S,35D) include a source extension region 35S formed in the source-sidecavity 29S, and a drain extension region 35D formed in the drain-sidecavity 29D.

For example, each source extension region 35S and each drain extensionregion 35D can include dopants of a respective second conductivity typeat an atomic concentration in a range from 1.0×10¹⁷/cm³ to 1.0×10²⁰/cm³,such as from 1.0×10¹⁸/cm³ to 1.0×10¹⁹/cm³, although lesser and greateratomic concentrations can also be employed.

The semiconductor material of the extension regions (35S, 35D) (i.e.,the material composition excluding dopants) may be the same as, or maybe different, from the semiconductor material of the base semiconductorportion 30B. For example, if the base semiconductor portion 30B is asingle crystalline silicon portion having a doping of the firstconductivity type, the extension regions (35S, 35D) may be a singlecrystalline silicon portion having a doping of the second conductivitytype or a single crystalline silicon-germanium portion having a dopingof the second conductivity type. The single crystalline semiconductormaterial of the extension regions (35S, 35D) can be epitaxially alignedto the single crystalline semiconductor material of the basesemiconductor portion 30B.

The thickness of the extension regions (35S, 35D) (i.e., the verticaldistance between the top surface and the bottom surface of each of theextension regions (35S, 35D)) may be the same as, greater than, or lessthan, the height of the sidewalls of the pedestal semiconductor portion30P that contact the first dielectric gate spacer 56. In one embodiment,the thickness of the extension regions (35S, 35D) may be in a range from50 nm to 1,000 nm, such as from 300 nm to 500 nm, although lesser andgreater vertical distances may also be employed. In one embodiment, topsurfaces of the extension regions (35S, 35D) can be located below thehorizontal plane including the top surface of the shallow trenchisolation structure 20. The dielectric cover layer 260 can besubsequently removed, for example, by an isotropic etch process such asa wet etch process.

Referring to FIGS. 14A and 14B, a source region 34S and a drain region34D having a doping of the second conductivity type (which is anopposite of the first conductivity type) are formed within upper regionsof the pair of epitaxial semiconductor material portions by convertingthe upper regions of the pair of epitaxial semiconductor materialportions into the source region 34S and the drain region 34D or byepitaxially growing additional single crystal semiconductor materialdoped with a higher concentration of dopants of the second conductivitytype on the extension regions (35S, 35D). In one embodiment, dopants ofthe second conductivity type can be implanted into upper portions of theextension regions (35S, 35D) in the first device region 100 and intoupper portions of the semiconductor substrate 10 that are not masked bythe second gate stack structure (250, 52, 54, 58), the dielectric gatespacers (56, 256), the shallow trench isolation spacers 66, or theshallow trench isolation structures 20 in the second device region 200.For example, at least one ion implantation process may be employed tointroduce dopants of the second conductivity type into surface portionsof the extension regions (35S, 35D), thereby converting the implantedsurface portions of the extension regions (35S, 35D) into a sourceregion 34S and a drain region 34D in the first device region 100.Dopants of the second conductivity type can be introduced into surfaceportion of the semiconductor substrate 10 in the second device region200 to form a source region 234S and a drain region 234D. In case p-typetransistors and n-type transistors are formed on the semiconductorsubstrate 10, masked ion implantation processes may be employed toimplant dopants of different conductivity type into different fieldeffect transistors.

For example, multiple instances of the first device region 100 can beformed on the semiconductor substrate 10 such that a first subset of thefirst device regions 100 includes p-type doped portions of thesemiconductor substrate 10 (so that the first conductivity type isp-type for the first subset) and a second subset of the first deviceregions 100 includes n-type doped portions of the semiconductorsubstrate 10 (so that the first conductivity type is n-type for thesecond subset). For each first device region 100 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source region 34S and a respectivedrain region 34D. For each second device region 200 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source region 34S and a respectiveextension region 34D. The source regions 34S and the drain regions 34Dof different field effect transistors may, or may not, have the sameatomic concentration of dopants. Thus, one or more masked ionimplantation processes may be employed to provide dopants of arespective second conductivity type at a target atomic concentrationwithin each of the source regions 34S and the drain regions 34D. In oneembodiment, each source region (34S, 234S) and each drain region (34D,234D) can include dopants of a respective second conductivity type at anatomic concentration in a range from 5.0×10¹⁸/cm³ to 2.0×10²¹/cm³, m,such as from 1.0×10²⁰/cm³ to 1.0×10²¹/cm³, although lesser and greateratomic concentrations can also be employed.

The thickness of the source region 34S and the drain region 34D in eachfirst device region 100 can be less than the thickness of the extensionregions (35S, 35D) as formed at the processing steps of FIGS. 13A and13B. For example, the thickness of the source region 34S and the drainregion 34D in each first device region 100 may be in a range from 50 nmto 1,000 nm, such as 100 nm to 300 nm, although lesser and greaterthicknesses may also be employed. Thus, unimplanted portions of theextension regions (35S, 35D) remain under the source region 34S and thedrain region 34D after formation of the source region 34S and the drainregion 34D in the first device region 100.

Referring to FIGS. 15A and 15B, the processing steps of FIGS. 7A-7C canbe performed to form a dielectric liner 62, a planarization dielectriclayer 70, and contact via structures (88S, 88D, 88G). The contact viastructures (88S, 88D, 88G) can include a source contact via structure88S (i.e., source electrode) that includes a source metallic liner 81Sand a source metallic fill material portion 83S, a drain contact viastructure 88D (i.e., drain electrode) that includes a drain metallicliner 81D and a drain metallic fill material portion 83D, and a gatecontact via structure 88G (i.e., gate contact) that includes a gatemetallic liner 81G and a gate metallic fill material portion 83G. Thesource contact via structure 88S contacts a top surface of a sourceregion (34S, 234S), the drain contact via structure 88D contacts a topsurface of a drain region (34D, 234D), and a gate contact via structure88G contacts a top surface of a gate electrode (52, 54).

Referring to FIGS. 16A and 16B, a third exemplary structure according toan embodiment of the present disclosure can be the same as the firstexemplary structure of FIGS. 5A and 5B.

Referring to FIGS. 17A and 17B, the processing steps of FIGS. 6A and 6Bcan be performed to form dielectric gate spacers (56, 256) and shallowtrench isolation spacers 66. For example, a conformal dielectricmaterial layer including a dielectric material such as silicon oxide canbe deposited, and can be subsequently anisotropically etched byperformed an anisotropic etch process such as a reactive ion etchprocess. A first dielectric gate spacer 56 is formed around the firstgate stack structure (50, 52, 54, 58) in the first device region 100,and a second dielectric gate spacer 256 is formed around the second gatestack structure (250, 52, 54, 58) in the second device region 200. Thefirst dielectric gate spacer 56 can be formed on a pair of sidewalls ofthe first gate stack structure (50, 52, 54, 58) and on a pair ofsidewalls of the pedestal semiconductor portion 30P that are verticallycoincident with the pair of sidewalls of the first gate stack structure(50, 52, 54, 58). The width of the first dielectric gate spacer 56 andthe second dielectric gate spacer 256 can be in a range from 20 nm to400 nm, such as from 40 nm to 20 nm, although lesser and greater widthscan also be employed.

A remaining portion of the conformal dielectric material layer in thefirst device region 100 comprises a first shallow trench isolationspacer 66 that comprises a same insulating material as the firstdielectric gate spacer 56 and the second dielectric gate spacer 256. Thefirst shallow trench isolation spacer 66 contacts sidewalls of theshallow trench isolation structure 20 and peripheral potions of the pairof top horizontal surfaces 31 of the base semiconductor portion 30B. Thefirst shallow trench isolation spacer 66 is adjoined to the firstdielectric gate spacer 56.

Referring to FIGS. 18A and 18B, a dielectric cover layer 260 can beconformally deposited over the second exemplary structure, and can belithographically patterned to cover the second device region 200 withoutcovering the first device region 100. The dielectric cover layer 260includes a dielectric material such as silicon oxide or silicon nitride.The thickness of the dielectric cover layer 260 may be in a range from10 nm to 50 nm, although lesser and greater thicknesses may also beemployed.

A selective semiconductor deposition process can be performed to grow asingle crystalline or polycrystalline semiconductor material (e.g.,silicon) from each physically exposed surface of the semiconductorsubstrate 10. Particularly, a single crystalline or polycrystallinesemiconductor material is deposited on each physically exposed portionof the top horizontal surfaces 31 of the base semiconductor portion 30Bin the first device region 100. The dielectric cover layer 260 preventsdeposition of a semiconductor material over the second device region200.

In one embodiment, the selective semiconductor deposition process maycomprise a selective epitaxy process that grows single crystallinesemiconductor materials from physically exposed semiconductor surfacessuch as the physically exposed portions of the top horizontal surfaces31 of the base semiconductor portion 30B in the first device region 100.In this case, the second exemplary structure can be placed within avacuum enclosure of a selective epitaxy process chamber, and a precursorgas for depositing a semiconductor material and an etchant gas can besimultaneously or alternately flowed into the vacuum enclosure to effectthe selective semiconductor deposition process. The precursor gas mayinclude, for example, silane, disilane, dichlorosilane, trichlorosilane,germane, digermane, and/or other semiconductor precursor gases known inthe art. The etchant gas may include, for example, gas phase hydrogenchloride. Epitaxial semiconductor material portions can grow from thephysically exposed portions of the top horizontal surfaces 31 of thebase semiconductor portion 30B in the first device region 100.

In one embodiment, a pair of epitaxial semiconductor material portionscan be formed by growing a single crystalline semiconductor materialfrom the pair of top horizontal surfaces 31 of the base semiconductorportion 30B in the first device region 100. In one embodiment, theepitaxial semiconductor material portions can have a doping of a secondconductivity type that is the opposite of the first conductivity type.In this case, the single crystalline semiconductor material can be grownwith in-situ doping with dopants of the second conductivity type. Theepitaxial semiconductor material portions can function as additionalextensions of a source region and a drain region, and are hereinreferred to as a raised source extension regions 33S and a raised drainextension region 33D. The raised source extension region 33S is formedon a top surface of the source extension region 32S and the raised drainextension region 33D is formed on a top surface of the drain extensionregion 32D in the first device region 100. In this case, the singlecrystalline semiconductor material of the raised source extension region33S and the raised drain extension region 33D can be grown with in-situdoping with dopants of the second conductivity type.

The raised source extension region 33S and the raised drain extensionregion 33D may include dopants of the second conductivity type at anatomic concentration that may be the same as, or may be different from,the atomic concentration of dopants of the second conductivity typewithin the source extension region 32S and the drain extension region32D. For example, the raised source extension region 33S and the raiseddrain extension region 33D may include dopants of the secondconductivity type at an atomic concentration in a range from1.0×10¹⁸/cm³ to 1.0×10²⁰/cm³, such as from 5.0×10¹⁸/cm³ to 5.0×10¹⁹/cm³,although lesser and greater atomic concentrations can also be employed.

The semiconductor material of the raised source extension region 33S andthe raised drain extension region 33D (i.e., the material compositionexcluding dopants) may be the same as, or may be different, from thesemiconductor material of the base semiconductor portion 30B. Forexample, if the base semiconductor portion 30B comprises a singlecrystalline silicon portion, the extension regions (35S, 35D) may be asingle crystalline silicon portion having a doping of the secondconductivity type or a single crystalline silicon-germanium portionhaving a doping of the second conductivity type. The single crystallinesemiconductor material of raised source extension region 33S and theraised drain extension region 33D can be epitaxially aligned to thesingle crystalline semiconductor material of the base semiconductorportion 30B.

The thickness of raised source extension region 33S and the raised drainextension region 33D (i.e., the vertical distance between the topsurface and the bottom surface of each of the raised source extensionregion 33S and the raised drain extension region 33D) may be the sameas, greater than, or less than, the height of the sidewalls of thepedestal semiconductor portion 30P that contact the first dielectricgate spacer 56. In one embodiment, the thickness of raised sourceextension region 33S and the raised drain extension region 33D may be ina range from 50 nm to 1,500 nm, such as from 150 nm to 1,000 nm,although lesser and greater vertical distances may also be employed. Inone embodiment, top surfaces of raised source extension region 33S andthe raised drain extension region 33D can be located below thehorizontal plane including the top surface of the shallow trenchisolation structure 20.

In the third exemplary structure, at least one doped extension region(32S, 32D) having a doping of the second conductivity type can be formedunderneath at least one sidewall of the pedestal semiconductor portion30P prior to formation of the first dielectric gate spacer 56. Each ofthe at least one doped extension region (32S, 32D) is adjoined to arespective one of the pair of epitaxial semiconductor material portions(i.e., the raised source extension region 33S and the raised drainextension region 33D) upon formation of the pair of epitaxialsemiconductor material portions. The dielectric cover layer 260 can besubsequently removed, for example, by an isotropic etch process such asa wet etch process.

Referring to FIGS. 19A and 19B, a source region 34S and a drain region34D having a doping of the second conductivity type (which is anopposite of the first conductivity type) are formed within upper regionsof the pair of epitaxial semiconductor material portions or byepitaxially growing additional single crystal semiconductor materialdoped with a higher concentration of dopants of the second conductivitytype on the pair of epitaxial semiconductor material portions. In oneembodiment, dopants of the second conductivity type can be implantedinto upper portions of the raised source extension region 33S and theraised drain extension region 33D in the first device region 100, andinto upper portions of the semiconductor substrate 10 that are notmasked by the second gate stack structure (250, 52, 54, 58), thedielectric gate spacers (56, 256), the shallow trench isolation spacers66, or the shallow trench isolation structures 20 in the second deviceregion 200. For example, at least one ion implantation process may beemployed to introduce dopants of the second conductivity type intosurface portions of the raised source extension region 33S and theraised drain extension region 33D, thereby converting the implantedsurface portions of the raised source extension region 33S and theraised drain extension region 33D into a source region 34S and a drainregion 34D in the first device region 100. Dopants of the secondconductivity type can be introduced into surface portion of thesemiconductor substrate 10 in the second device region 200 to form asource region 34S and a drain region 34D. In case p-type transistors andn-type transistors are formed on the semiconductor substrate 10, maskedion implantation processes may be employed to implant dopants ofdifferent conductivity type into different field effect transistors.

For example, multiple instances of the first device region 100 can beformed on the semiconductor substrate 10 such that a first subset of thefirst device regions 100 includes p-type doped portions of thesemiconductor substrate 10 (so that the first conductivity type isp-type for the first subset) and a second subset of the first deviceregions 100 includes n-type doped portions of the semiconductorsubstrate 10 (so that the first conductivity type is n-type for thesecond subset). For each first device region 100 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source region 34S and a respectivedrain region 34D. For each second device region 200 having a doping of arespective first conductivity type, dopants of a respective secondconductivity type that is the opposite of the first conductivity typecan be implanted to form a respective source region 234S and arespective extension region 234D. The source regions (34S, 234S) and thedrain regions (34D, 234D) of different field effect transistors may, ormay not, have the same atomic concentration of dopants. Thus, one ormore masked ion implantation processes may be employed to providedopants of a respective second conductivity type at a target atomicconcentration within each of the source regions and the drain regions.In one embodiment, each source region and each drain region can includedopants of a respective second conductivity type at an atomicconcentration in a range from 5.0×10¹⁸/cm³ to 2.0×10²¹/cm³, such as from1.0×10²⁰/cm³ to 1.0×10²¹/cm³, although lesser and greater atomicconcentrations can also be employed.

The thickness of the source region 34S and the drain region 34D in eachfirst device region 100 can be less than the thickness of the raisedsource extension region 33S and the raised drain extension region 33D asformed at the processing steps of FIGS. 18A and 18B. For example, thethickness of the source region 34S and the drain region 34D in eachfirst device region 100 may be in a range from 50 nm to 1,000 nm,although lesser and greater thicknesses may also be employed. Thus,unimplanted portions of the raised source extension region 33S and theraised drain extension region 33D remain under the source region 34S andthe drain region 34D after formation of the source region 34S and thedrain region 34D in the first device region 100.

Referring to FIG. 20, the processing steps of FIGS. 7A-7C can beperformed to form a dielectric liner 62, a planarization dielectriclayer 70, and contact via structures (88S, 88D, 88G). The contact viastructures (88S, 88D, 88G) can include a source contact via structure88S (i.e., source electrode) that includes a source metallic liner 81Sand a source metallic fill material portion 83S, a drain contact viastructure 88D (i.e., drain electrode) that includes a drain metallicliner 81D and a drain metallic fill material portion 83D, and a gatecontact via structure 88G (i.e., gate contact) that includes a gatemetallic liner 81G and a gate metallic fill material portion 83G. Thesource contact via structure 88S contacts a top surface of a sourceregion (34S, 234S), the drain contact via structure 88D contacts a topsurface of a drain region (34D, 234D), and a gate contact via structure88G contacts a top surface of a gate electrode (52, 54). The topsurfaces of the source region 34S and the drain region 34D in the firstdevice region 100 can be located above the horizontal plane includingthe interface between the first gate dielectric 50 and the pedestalsemiconductor portion 30P.

Referring to FIGS. 10A-20 and all related drawings of the firstexemplary structure and according to various embodiments of the presentdisclosure, a semiconductor structure is provided, which comprises: ashallow trench isolation structure 20 comprising a dielectric materialembedded within a semiconductor material layer (e.g., a well in or anepitaxial layer in the semiconductor substrate 10) and laterallysurrounding an upper portion (30B, 30P) of the semiconductor materiallayer, wherein the upper portion of the semiconductor material layercomprises a base semiconductor portion 30B comprising a pair of tophorizontal surfaces 31 and a pedestal semiconductor portion 30P locatedbetween the pair of top horizontal surfaces 31 and vertically protrudingabove a horizontal plane HP including the pair of top horizontalsurfaces 31; a gate stack structure (50, 52, 54, 58) comprising a gatedielectric 50 and a gate electrode (52, 54) and including a pair ofsidewalls that are vertically coincident with a pair of sidewalls of thepedestal semiconductor portion 30P; a dielectric gate spacer 56contacting the pair of sidewalls of the gate stack structure (50, 52,54, 58) and the pair of sidewalls of the pedestal semiconductor portion30P; and a pair of epitaxial semiconductor material portions {(35S, 35D,34S, 34D) or (33S, 33D, 34S, 34D)} located on, and above, the pair oftop horizontal surfaces 31 of the base semiconductor portion 30B andepitaxially aligned to the base semiconductor portion 30B, wherein thepair of epitaxial semiconductor material portions {(35S, 35D, 34S, 34D)or (33S, 33D, 34S, 34D)} comprises a source region 34S and a drainregion 34D.

In one embodiment, a bottom surface of the source region 34S and abottom surface of the drain region 34D are located above a horizontalplane HP including the pair of top horizontal surfaces 31 of the basesemiconductor portion 30.

In one embodiment, the dielectric gate spacer 56 contacts peripheralportions of the pair of top horizontal surfaces 31 of the basesemiconductor portion 30B.

In one embodiment, a horizontal interface between the gate dielectric 50and the pedestal semiconductor portion 30P is located above thehorizontal plane HP including the pair of top horizontal surfaces 31 ofthe base semiconductor portion 30B; and a vertical distance between thehorizontal interface between the gate dielectric 50 and the pedestalsemiconductor portion 30P and the horizontal plane HP including the pairof top horizontal surfaces 31 of the base semiconductor portion 30B isin a range from 100 nm to 2 microns.

In one embodiment, the semiconductor structure comprises a shallowtrench isolation spacer 66 that comprises a same insulating material asthe dielectric gate spacer 56, adjoined to the dielectric gate spacer56, and contacts sidewalls of the shallow trench isolation structure 20that are located above the horizontal plane HP including the pair of tophorizontal surfaces 31 of the base semiconductor portion 30B. In oneembodiment, an entirety of sidewalls of pair of epitaxial semiconductormaterial portions {(35S, 35D, 34S, 34D) or (33S, 33D, 34S, 34D)}contacts a respective sidewall of the dielectric gate spacer 56 or arespective sidewall of the shallow trench isolation spacer 66.

In one embodiment, semiconductor structure comprises: a dielectric liner62 continuously extending over, and contacting, a top surface of thesource region 34S, a top surface of the drain region 34D, an outersidewall of the dielectric gate spacer 56, and a top surface of the gatestack structure (50, 52, 54, 58); a planarization dielectric layer 70overlying the dielectric liner 62 and having a planar top surface; andcontact via structures (88S, 88D, 88G) vertically extending through theplanarization dielectric layer 70 and the dielectric liner 62 andcontacting a respective one of the source region 34S, the drain region,34D and the gate electrode (52, 54).

In one embodiment, the base semiconductor portion 30B comprises a firstsingle crystalline semiconductor material portion having a doping of afirst conductivity type; the pedestal semiconductor portion 30Pcomprises of a second single crystalline semiconductor material potionhaving a doping of a second conductivity type that is an opposite of thefirst conductivity type; and the source region 34S and the drain region34D have a doping of the second conductivity type. In one embodiment,the first single crystalline semiconductor material portion and thesecond single crystalline semiconductor material portion have a samematerial composition and are epitaxially aligned to each other.

In one embodiment, each of the pair of epitaxial semiconductor materialportions (35S, 35D, 34S, 34D) comprises a respective extension region(35S, 35D) having a doping of the second conductivity type andcontacting a bottom surface of a respective one of the source region 34Sand the drain region 34D.

In one embodiment, the second single crystalline semiconductor materialpotion (having a doping of the second conductivity type) contactssidewalls of the dielectric gate spacer 56, as illustrated in FIGS. 15Aand 15B.

In one embodiment, the pedestal semiconductor portion 30P comprises of asource extension region 32S and a drain extension region 32D having adoping of the second conductivity type, adjoined to a bottom surface ofthe gate dielectric 50, contacting a bottom surface of the dielectricgate spacer 56, and including a horizontally-extending region having arespective top surface within the horizontal plane including the pair oftop horizontal surfaces 31.

In one embodiment, the pair of epitaxial semiconductor material portions(33S, 33D, 34S, 34D) comprises: a raised source extension region 33Scontacting a bottom surface of the source region 34S and having a bottomsurface located within the horizontal plane HP including the pair of tophorizontal surfaces 31; and a raised drain extension region 33Dcontacting a bottom surface of the drain region 34D and having a bottomsurface located within the horizontal plane HP including the pair of tophorizontal surfaces 31.

Referring to FIG. 21, a first device region 100 of a fourth exemplarystructure according to an embodiment of the present disclosure isillustrated. The fourth exemplary structure may be the same as the firstexemplary structure of FIGS. 3A-3D at this processing step. The fourthexemplary structure may include a second device region 200 as in thefirst exemplary structure of FIG. 3A-3D.

Referring to FIG. 22, the processing steps of FIGS. 5A and 5B can beperformed to form a source extension region 32S and a drain extensionregion 32D in the first device region 100. The second device region 200(not illustrated) of the fourth exemplary structure may be the same asthe second device region 200 of the first exemplary structureillustrated in FIG. 5B at this processing step.

Referring to FIG. 23, the processing steps of FIGS. 6A and 6B can beperformed to form a first dielectric gate spacer 56 and a first shallowtrench isolation spacer 66 in the first device region 100. In oneembodiment, the bottom surface of the first dielectric gate spacer 56may be formed within the horizontal plane including the bottom surfaceof the first gate dielectric 50. A second dielectric gate spacer 256 canbe formed in the second device region 200 in the same manner asillustrated in FIG. 6B.

Referring to FIG. 24, a dielectric liner 62 can be conformally depositedover the top surface of each source extension region 32S and a drainextension region 32D, an outer sidewall of each dielectric gate spacer(56, 256), and a top surface of each gate stack structure ((50 or 250),52, 54, 58) in the first device region 100 and the second device region200. The dielectric liner 62 can include a dielectric diffusion barriermaterial, such as silicon nitride. In one embodiment, the dielectricliner 62 may include a stress-inducing silicon nitride material that caninduce tensile stress or compress stress in the channel regions, i.e.,portions of the semiconductor substrate 10 that underlie a gatedielectric (50 or 250). The dielectric liner 62 can be deposited by aconformal deposition process such as a chemical vapor depositionprocess. The thickness of the dielectric liner 62 can be in a range from5 nm to 100 nm, such as from 10 nm to 50 nm, although lesser and greaterthicknesses may also be employed.

A planarization dielectric layer 70 can be formed over the dielectricliner 62. The planarization dielectric layer 70 can include aself-planarizing dielectric material such as flowable oxide (FOX) or aplanarizable dielectric material such as undoped silicate glass or adoped silicate glass. In case the planarization dielectric layer 70includes undoped silicate glass or a doped silicate glass, a top surfaceof the planarization dielectric layer 70 can be planarized by performinga chemical mechanical planarization process. The top surface of theplanarization dielectric layer 70 may be vertically spaced above thetopmost surface of the dielectric liner 62 by a vertical distance in arange from 100 nm to 1,000 nm, such as from 200 nm to 500 nm, althoughlesser and greater vertical spacings may also be employed.

Referring to FIGS. 25A and 25B, via cavities (89S, 89D, 89G) can beformed through the planarization dielectric layer 70 and the dielectricliner 62 on each of the source extension regions 32S, the drainextension regions 32D, and the gate cap dielectric 58 located on thegate electrodes (52, 54). For example, a photoresist layer (not shown)can be applied over the planarization dielectric layer 70, and can belithographically patterned to form discrete openings in areas thatoverlie the source extension regions 32S, the drain extension regions32D, and the gate cap dielectric 58. Alternatively, the gate contact viacavity 89G can be extended through the gate cap dielectric 58 to thegate electrode (52, 54). An anisotropic etch process can be performed totransfer the pattern of the openings in the photoresist layer throughthe planarization dielectric layer 70 and the dielectric liner 62.

If both p-type and n-type transistors are formed, then the via cavities(89S, 89D) may extend through the dielectric liner 62 in oneconductivity type of transistors (e.g., in n-type transistors), whilethe via cavities (89S, 89D) may stop on the dielectric liner 62 in theother conductivity type of transistors (e.g., in p-type transistors),such that subsequent epitaxial growth described below with respect toFIG. 26 occurs in the via cavities of only the first conductivity typetransistors. The via cavities (89S, 89D) in the other conductivity typeof transistors may be extended through the dielectric liner 62 after theepitaxial growth in the first conductivity type transistors, followed byseparate epitaxial growth in the via cavities (89S, 89D) of the secondconductivity type transistors.

Surfaces of the source extension regions 32S, the drain extensionregions 32D, and the gate cap dielectric 58 are physically exposedunderneath the via cavities (89S, 89D, 89G). The photoresist layer canbe subsequently removed, for example, by ashing. Each of the viacavities (89S, 89D, 89G) may include a respective straight sidewall thatvertically extends from the top surface of the planarization dielectriclayer 70 at least to a top surface of respective one of the sourceextension regions 32S, the drain extension regions 32D, and the gate capdielectric 58. In one embodiment, the via cavities (89S, 89D, 89G) mayextend below the horizontal plane including the topmost surface of arespective one of the source extension regions 32S, the drain extensionregions 32D, and the gate cap dielectric 58.

The via cavities (89S, 89D, 89G) can include at least one source contactvia cavity 89S, at least one drain contact via cavity 89D, and at leastone partially completed gate contact via cavity 89G. A surface of asource region 34S is physically exposed at the bottom of each sourcecontact via cavity 89S. A surface of a drain region 34D is physicallyexposed at the bottom of each drain contact via cavity 89D. A surface ofthe gate cap dielectric 58 is physically exposed at the bottom of eachgate contact via cavity 89G.

In one alternative embodiment, the gate contact via cavity 89G mayextend through the gate cap dielectric 58 to expose the top surface ofthe gate electrode. For example, the gate electrode (52, 54) can includea vertical stack of a semiconductor gate electrode 52 and a metallicgate electrode 54 including a metallic material. In this case, a topsurface of the metallic gate electrode 54 can be physically exposed atthe bottom of each gate contact via cavity 89G. In another alternativeembodiment, the at least one gate contact via cavity 89G can be formedin a subsequent processing step.

Referring to FIG. 26, a selective semiconductor deposition process canbe performed to grow a single crystalline or polycrystallinesemiconductor material from each physically exposed semiconductorsurface. Particularly, a single crystalline or polycrystallinesemiconductor material (e.g., silicon) can be grown from the physicallyexposed semiconductor surfaces of the source extension region 32S and adrain extension region 32D. The semiconductor material does not growfrom the exposed gate cap dielectric 58.

In one embodiment, the selective semiconductor deposition process maycomprise a selective epitaxy process that grows single crystallinesemiconductor materials from physically exposed semiconductor surfacessuch as the physically exposed surfaces of the source extension region32S and a drain extension region 32D in the first device region 100. Inthis case, the fourth exemplary structure can be placed within a vacuumenclosure of a selective epitaxy process chamber, and a precursor gasfor depositing a semiconductor material and an etchant gas can besimultaneously or alternately flowed into the vacuum enclosure to effectthe selective semiconductor deposition process. The precursor gas mayinclude, for example, silane, disilane, dichlorosilane, trichlorosilane,germane, digermane, and/or other semiconductor precursor gases known inthe art. The etchant gas may include, for example, gas phase hydrogenchloride. Epitaxial semiconductor material portions can grow from thephysically exposed portions of the source extension region 32S and adrain extension region 32D in the first device region 100.

In one embodiment, epitaxial semiconductor material portions can beformed by growing a single crystalline semiconductor material from thephysically exposed surfaces of the source extension region 32S and adrain extension region 32D in the first device region 100. In oneembodiment, the epitaxial semiconductor material portions can have adoping of a same conductivity type as the source extension region 32Sand the drain extension region 32D, i.e., a doping of the secondconductivity type. In this case, the single crystalline semiconductormaterial can be grown with in-situ doping with dopants of the secondconductivity type.

The epitaxial semiconductor material portions are pillar-shaped, arenarrower than the source extension region 32S and a drain extensionregion 32D, and can function as vertically-extending extensions of thesource extension region 32S and the drain extension region 32D. Thus,each epitaxial semiconductor material portion formed in the sourcecontact via cavity 89S is herein referred to as a source extensionpillar structure 133S, and each epitaxial semiconductor material portionformed in the drain contact via cavity 89D is herein referred to as adrain extension pillar structure 133D. The source extension pillarstructure(s) 133S and the drain extension pillar structure(s) 133D arecollectively referred to as extension pillar structures (133S, 133D).

The growth of the semiconductor material occurs only from semiconductorsurfaces during the selective epitaxy process. Thus, no semiconductormaterial is deposited in the gate contact via cavity/cavities 89G fromthe exposed gate cap dielectric 58. The duration of the selectiveepitaxy process can be selected such that the height of the extensionpillar structures (133S, 133D) is in a range from 50 nm to 1,000 nm,such as from 100 nm to 500 nm, although lesser and greater heights mayalso be employed. The top surfaces of the extension pillar structures(133S, 133D) may be formed above, at, or below the horizontal planeincluding the topmost surface of the gate stack structure (50, 52, 54,58). The top surfaces of the extension pillar structures (133S, 133D)may be located above, at, or below the horizontal plane including thetop surface of the gate stack structure (50, 52, 54, 58).

The extension pillar structures (133S, 133D) may include dopants of thesecond conductivity type at an atomic concentration that may be the sameas, or may be different from, the atomic concentration of dopants of thesecond conductivity type within the source extension region 32S and thedrain extension region 32D. For example, the extension pillar structures(133S, 133D) may include dopants of the second conductivity type at anatomic concentration in a range from 1.0×10¹⁸/cm³ to 1.0×10²⁰/cm³, suchas from 5.0×10¹⁸/cm³ to 5.0×10¹⁹/cm³, although lesser and greater atomicconcentrations can also be employed.

The semiconductor material of the extension pillar structures (133S,133D) (i.e., the material composition excluding dopants) may be the sameas, or may be different, from the semiconductor material of the sourceextension region 32S and the drain extension region 32D. For example, ifthe source extension region 32S and the drain extension region 32Dinclude a respective a single crystalline silicon portion having adoping of the second conductivity type, the extension pillar structures(133S, 133D) may include a respective single crystalline silicon portionhaving a doping of the second conductivity type or a respective singlecrystalline silicon-germanium portion having a doping of the secondconductivity type. The single crystalline semiconductor material of theextension pillar structures (133S, 133D) can be epitaxially aligned tothe single crystalline semiconductor material of the source extensionregion 32S and the drain extension region 32D. A source-side cavity 87Sis present over each source extension pillar structure 133S, and adrain-side cavity 87D is present over each drain extension pillarstructure 133D.

Referring to FIGS. 27A and 27B, dopants of the second conductivity typecan be implanted into upper portions of the extension pillar structures(133S, 133D) or by epitaxially growing additional single crystalsemiconductor material doped with a higher concentration of dopants ofthe second conductivity type on the upper portions of the extensionpillar structures (133S, 133D). For example, an ion implantation processmay be employed to introduce dopants of the second conductivity typeinto the upper portions of the extension pillar structures (133S, 133D).In case p-type transistors and n-type transistors are formed on thesemiconductor substrate 10, masked ion implantation processes may beemployed to implant dopants of different conductivity type intodifferent field effect transistors.

Generally, each source region 34S and each drain region 34D can includedopants of a respective second conductivity type at an atomicconcentration that is greater than the atomic concentration of dopantsin the extension pillar structures (133S, 133D). For example, eachsource region 34S and each drain region 34D can include dopants of arespective second conductivity type at an atomic concentration in arange from 5.0×10¹⁸/cm³ to 2.0×10²¹/cm³, m, such as from 1.0×10²⁰/cm³ to1.0×10²¹/cm³, although lesser and greater atomic concentrations can alsobe employed. The thickness of the source region 34S and the drain region34D in each first device region 100 may be in a range from 50 nm to 300nm, although lesser and greater thicknesses may also be employed.Unimplanted portions of the extension pillar structures (133S, 133D)remain as the extension pillar structures (133S, 133D).

Generally, a pair of doped semiconductor material portions (such as theextension pillar structures (133S, 133D) as formed at the processingsteps of FIG. 26) can be deposited on physically exposed surfaces of thesource extension region 32S and the drain extension region 32D in a pairof via cavities that includes a source contact via cavity 87S and adrain contact via cavity 87D. Dopants of the second conductivity typecan be implanted into upper portions of the pair of doped semiconductormaterial portions. Implanted regions of the pair of doped semiconductormaterial portions comprise a source region 34S and a drain region 34D.Unimplanted regions of the pair of doped semiconductor material portionscomprise a source extension pillar structure 133S and the drainextension pillar structure 133D. In case multiple source contact viacavities 89S are formed on the source extension region 32S or multipledrain contact via cavities 89D are formed on the drain extension region32D in the first device region 100, multiple pairs of a source extensionpillar structure 133S and a source region 34S and/or multiple pairs of adrain extension pillar structure 133D and a drain region 34D can beformed in the first device region 100.

In one embodiment, the source extension region 32S and the drainextension region 32D in the first device region 100 can be singlecrystalline, and doped semiconductor material portions (such as theextension pillar structures (133S, 133D) as formed at the processingsteps of FIGS. 26A and 26B) can be formed by a selective epitaxy processthat grows the doped semiconductor material portions as singlecrystalline semiconductor material portions in epitaxial alignment withthe source extension region 32S and the drain extension region 32D.Generally, each source extension pillar structure 133S, each drainextension pillar structure 133D, each source region 34S, and each drainregion 34D can be formed in at least one source contact via cavity 89Sand at least one drain contact via cavity 89D by selective depositionand doping of a semiconductor material without deposition of anysemiconductor material in the gate contact via cavity 89G.

Referring to FIGS. 28A and 28B, if the gate contact via cavity 89Gextends only to the gate cap dielectric 58, then the gate contact viacavity 89G is further etched (e.g., by RIE) to extend the gate contactvia cavity 89G through the gate cap dielectric 58 to the top surface ofthe gate electrode (52, 54). At least one conductive material can bedeposited in the unfilled volumes of the via cavities to form variousmetallic via structures (98S, 98D, 98G). For example, a metallic liner(such as a conductive metal nitride liner including TiN, TaN, or WN) anda metallic fill material (such as W, Ti, Co, Cu, Ru, or Al) may besequentially deposited in the via cavities, and excess portions of themetallic liner and the metallic fill material can be removed from abovethe planarization dielectric layer 70 by a planarization process such aschemical mechanical planarization or a recess etch. Each contiguous setof remaining metallic material portions constitutes a metallic viastructure (98S, 98D, or 98G). For example, the metallic via structures(98S, 98D, 98G) can include a source contact via structure 98S (i.e.,source electrode) that includes a source metallic liner 91S and a sourcemetallic fill material portion 93S, a drain contact via structure 98D(i.e., drain electrode) that includes a drain metallic liner 91D and adrain metallic fill material portion 93D, and a gate contact viastructure 98G (i.e., gate contact) that includes a gate metallic liner91G and a gate metallic fill material portion 93G. The source contactvia structure 98S contacts a top surface of a source region 34S, thedrain contact via structure 98D contacts a top surface of a drain region34D, and a gate contact via structure 98G contacts a top surface of agate electrode (52, 54).

A first conductive pillar structure 108S can be formed within eachsource contact via cavity 87S, and a second conductive pillar structure108D can be formed within each drain contact via cavity 87D. Each firstconducive via structure 108S may include a vertical stack including,from bottom to top, a source extension pillar structure 133S, a sourceregion 34S, and a source contact via structure 98S. Each secondconducive via structure 108D may include a vertical stack including,from bottom to top, a drain extension pillar structure 133D, a drainregion 34D, and a drain contact via structure 98D.

In one embodiment, a plurality of first conductive pillar structure 108Smay be formed on a source extension region 32S, and a plurality ofsecond conductive pillar structures 108D may be formed on a drainextension region 32D. FIGS. 28A and 28B illustrate an embodiment inwhich a first device region 100 includes three first conductive pillarstructure 108S and three second conductive pillar structures 108D.

Referring to FIG. 29, a partial see-through top-down view of a firstalternative configuration of the fourth exemplary structure isillustrated. A first device region 100 includes two elongated firstconductive pillar structure 108S and two second conductive pillarstructures 108D. A vertical cross-sectional view along the hinged planeA-A′ can be the same as the view illustrated in FIG. 28A.

Referring to FIGS. 30A and 30B, a respective vertical cross-sectionaland partial see-through top-down view of a second alternativeconfiguration of the fourth exemplary structure are illustrated. A firstdevice region 100 includes one elongated first conductive pillarstructure 108S and one second conductive pillar structures 108D.

Referring to FIGS. 31A and 31B, a respective vertical cross-sectionaland partial see-through top-down view of a third alternativeconfiguration of the fourth exemplary structure are illustrated. Thethird alternative configuration differs from the second alternativeconfiguration in that the elongated first and second conductive pillarstructures (108S, 108D) have a length along the elongation directionthat is greater than the length of the respective source and drainextension regions (32S, 32D) along the same direction. The elongationdirection may be perpendicular to the direction between the respectivesource and drain extension regions (32S, 32D). In this configuration theextension pillar structures (133S, 133D) are epitaxially grown from therespective source and drain extension regions (32S, 32D) and extendlaterally over the shallow trench isolation structures 20 in theelongation direction.

FIGS. 32A to 32G illustrate vertical cross-sectional views of the firstdevice region 100 during steps of forming of a fourth alternativeconfiguration of the fourth exemplary structure. In this fourthalternative configuration, polycrystalline semiconductor material isdeposited into the via cavities instead of epitaxially growing singlecrystalline semiconductor material in the via cavities.

FIG. 32A shows the first device region 100 which can be derived from thestructure shown in FIG. 25A, except that the gate contact via cavity 89Gis not formed in the structure of FIG. 32A.

Referring to FIG. 32B, a lightly doped polycrystalline semiconductormaterial layer 133 is deposited into the source and drain via cavities(89S, 89D) and over the planarization dielectric layer 70. The lightlydoped polycrystalline semiconductor layer 133 may comprise a lightlydoped polysilicon layer of the second conductivity type.

Referring to FIG. 32C, the lightly doped polycrystalline semiconductormaterial layer 133 is etched back using selective etching to removelayer 133 from above the planarization dielectric layer 70 and topartially remove layer 133 from the source and drain via cavities (89S,89D). The remaining portions of layer 133 in the source and drain viacavities (89S, 89D) constitute the respective source and drain extensionpillar structures (133S, 133D), respectively, similar to the structureshown in FIG. 26 and described above.

Referring to FIG. 32D, a heavily doped polycrystalline semiconductormaterial layer 34 is deposited into the remaining portions of the sourceand drain via cavities (89S, 89D) and over the planarization dielectriclayer 70. The heavily doped polycrystalline semiconductor layer 34 maycomprise a heavily doped polysilicon layer of the second conductivitytype having a higher doping concentration of the second conductivitytype than layer 133.

Referring to FIG. 32E, the heavily doped polycrystalline semiconductormaterial layer 34 is etched back using selective etching to remove layer34 from above the planarization dielectric layer 70 and to partiallyremove layer 34 from the source and drain via cavities (89S, 89D). Theremaining portions of layer 34 in the source and drain via cavities(89S, 89D) constitute the respective source and drain regions (34S,34D), respectively, similar to the structure shown in FIG. 27A anddescribed above.

Referring to FIG. 32F, the gate contact via cavity 89G is formed byphotolithography and etching through the planarization dielectric layer70 to expose the gate electrode (52, 54).

Referring to FIG. 32G, the steps shown in FIG. 28A and described aboveare performed to form the contact via structures (98S, 98D, 98G) in therespective contact via cavities (89S, 89D, 89G).

Referring to FIGS. 21-32G and additional drawings related to the fourthexemplary structure and according to various embodiments of the presentdisclosure, a semiconductor structure is provided, which comprises: agate stack structure (50, 52, 54, 58) overlying a semiconductor materiallayer (e.g., a well in or an epitaxial layer in the semiconductorsubstrate 10) having a doping of a first conductivity type andcomprising a gate dielectric 50 and a gate electrode (52, 54); a sourceextension region 32S and a drain extension region 32D embedded in anupper portion of the semiconductor material layer and located onopposite sides of the gate stack structure (50, 52, 54, 58); aplanarization dielectric layer 70 overlying the gate stack structure(50, 52, 54, 58), the source extension region 32S, and the drainextension region 32D; a first conductive via structure 108S verticallyextending through the planarization dielectric layer 70 in contact withthe source extension region, having a narrower width than the sourceextension region, and comprising a source extension pillar structure133S and a source region 34S; and a second conductive via structure 108Dvertically extending through the planarization dielectric layer 70 incontact with the drain extension region, having a narrower width thanthe drain extension region, and comprising a drain extension pillarstructure 133D and a drain region 34D, wherein: the source extensionregion 32S, the drain extension region 32D, the source extension pillarstructure 133S, the drain extension pillar structure 133D, the sourceregion 34S, and the drain region 34D have a doping of a secondconductivity type that is opposite of the first conductivity type; andthe source region 34S and the drain region 34D include dopants of thesecond conductivity type at a higher atomic concentration than thesource extension pillar structure 133S and the drain extension pillarstructure 133D.

In one embodiment, the source extension pillar structure 133S contacts asurface of the source extension region 32S; and the drain extensionpillar structure 133D contacts a surface of the drain extension region32D. In one embodiment, the source extension region 32S and the drainextension region 32D are single crystalline and epitaxially aligned tothe semiconductor material layer; the source extension pillar structure133S comprises a first single crystalline semiconductor material portionthat is epitaxially aligned to the source extension region 32S; and thedrain extension pillar structure 133D comprises a second singlecrystalline semiconductor material portion that is epitaxially alignedto the drain extension region 32D. In one embodiment, the source region34S is single crystalline and is epitaxially aligned to the sourceextension pillar structure 133S; and the drain region 34D is singlecrystalline and is epitaxially aligned to the drain extension pillarstructure 133D.

In one embodiment, the first conductive via structure 108S comprises asource-side metallic via structure 98S contacting a top surface of thesource region 34S and having a top surface within a horizontal planeincluding a top surface of the planarization dielectric layer 70; andthe second conductive via structure 108D comprises a drain-side metallicvia structure 98D contacting a top surface of the drain region 34D andhaving a top surface within the horizontal plane including the topsurface of the planarization dielectric layer 70.

In one embodiment, a top periphery of the source region 34S coincideswith a bottom periphery of the source-side metallic via structure 98S; atop periphery of the drain region 34D coincides with a bottom peripheryof the drain-side metallic via structure 98D; a bottom periphery of thesource region 34S coincides with a top periphery of the source extensionvia structure 133S; and a bottom periphery of the drain region 34Dcoincides with a top periphery of the drain extension via structure133D.

In one embodiment, the semiconductor structure comprises a gate contactvia structure 98G vertically extending through the planarizationdielectric layer 70 from the gate electrode 52, 54) to a top surface ofthe planarization dielectric layer 70 and consisting of a same set of atleast one metallic material as each of the source-side metallic viastructure 98S contacting and the drain-side metallic via structure 98D.

In one embodiment, a straight sidewall of the first conductive viastructure 108S extends from a top surface of the planarizationdielectric layer 70 to the source extension region 32S; and a straightsidewall of the second conductive via structure 108D extends from thetop surface of the planarization dielectric layer 70 to the drainextension region 32D.

In one embodiment, the semiconductor structure comprises a dielectricgate spacer 56 laterally surrounding the gate stack structure (50, 52,54, 58), wherein the first contact via structure 108S and the secondcontact via structure 108D are laterally spaced from the dielectric gatespacer 56. In one embodiment, the semiconductor structure comprises adielectric liner 62 continuously extending over, and contacting, a topsurface of the source extension region 32S, a top surface of the drainextension region 32D, an outer sidewall of the dielectric gate spacer56, and a top surface of the gate stack structure (50, 52, 54, 58),wherein each of the first conductive via structure 108S and the secondconductive via structure 108D extends through a respective horizontalportion of the dielectric liner 62.

In one embodiment, the source extension region 32S contacts a firstperipheral portion of a bottom surface of the gate dielectric 50; andthe drain extension region 32D contacts a second peripheral portion ofthe bottom surface of the gate dielectric 50.

In one embodiment, the semiconductor structure comprises a dielectricgate spacer 56 contacting the source extension region 32S and the drainextension region 32D at horizontal interfaces located within ahorizontal plane including a bottom surface of the gate dielectric 50.

In one embodiment, the source extension pillar structure 133S and thedrain extension pillar structure 133D include dopants of the secondconductivity type at a higher atomic concentration than the sourceextension region 32S and the drain extension region 32D.

The field effect transistor of one or more embodiments of the presentdisclosure can be used in any semiconductor device. In one embodiment,the high voltage field effect transistor in the first device region 100can be used as a peripheral (e.g., driver) high voltage transistor of amemory device. The low voltage field effect transistor in the seconddevice region 200 can be used as a peripheral (e.g., driver) low voltagetransistor of the same memory device. Memory devices include NAND andresistive RAM (ReRAM) memory devices. For example, the field effecttransistor can be used as a word line select transistor for a threedimensional NAND device having vertically oriented channels (i.e.,extending perpendicular to the top surface of the substrate) and chargestorage regions located adjacent to the channels (e.g., vertical NAND).Non-limiting examples of vertical NAND devices are described in U.S.published patent application numbers 2016/0351709 A1 (published Dec. 1,2016), and 2016/0365351 A1 (published Dec. 15, 2016), and in U.S. Pat.No. 9,449,987 B1 issued Sep. 20, 2016, and 9,305,934 B1 issued Apr. 5,2016, each of which is incorporated herein by reference in its entirety.

A field effect transistor of the embodiments of the present disclosurecan have a greater breakdown voltage due to the vertical current pathalong the inner sidewalls of the dielectric gate spacer 56 and/or alongthe outer sidewalls of the dielectric gate spacer 56 than a conventionalfield effect transistor having similar dimensions as the field effecttransistor of the present disclosure but not including vertical currentpaths. Additionally, the high voltage field effect transistor of one ormore of the embodiments of the present disclosure can be scaled downwith a smaller width than prior art high voltage field effecttransistors, while providing the same or higher breakdown voltage due tothe presence of the vertical current paths. In the first two exemplarystructures, a taller sidewall spacer than gate electrode eight createsspace between the channel under the gate electrode and the source anddrain contacts, which increases the channel length but does not wastethe chip area.

Although the foregoing refers to particular preferred embodiments, itwill be understood that the disclosure is not so limited. It will occurto those of ordinary skill in the art that various modifications may bemade to the disclosed embodiments and that such modifications areintended to be within the scope of the disclosure. Where an embodimentemploying a particular structure and/or configuration is illustrated inthe present disclosure, it is understood that the present disclosure maybe practiced with any other compatible structures and/or configurationsthat are functionally equivalent provided that such substitutions arenot explicitly forbidden or otherwise known to be impossible to one ofordinary skill in the art. All of the publications, patent applicationsand patents cited herein are incorporated herein by reference in theirentirety.

What is claimed is:
 1. A semiconductor structure comprising: a shallowtrench isolation structure comprising a dielectric material embeddedwithin a semiconductor material layer and laterally surrounding an upperportion of the semiconductor material layer, wherein the upper portionof the semiconductor material layer comprises a base semiconductorportion comprising a pair of top horizontal surfaces and a pedestalsemiconductor portion located between the pair of top horizontalsurfaces and vertically protruding above a horizontal plane includingthe pair of top horizontal surfaces; a gate stack structure comprising agate dielectric and a gate electrode and including a pair of sidewallsthat are vertically coincident with a pair of sidewalls of the pedestalsemiconductor portion; a dielectric gate spacer contacting the pair ofsidewalls of the gate stack structure and the pair of sidewalls of thepedestal semiconductor portion; and a pair of epitaxial semiconductormaterial portions located on and above the pair of top horizontalsurfaces of the base semiconductor portion and epitaxially aligned tothe base semiconductor portion, wherein the pair of epitaxialsemiconductor material portions comprises a source region and a drainregion.
 2. The semiconductor structure of claim 1, wherein a bottomsurface of the source region and a bottom surface of the drain regionare located above a horizontal plane including the pair of tophorizontal surfaces of the base semiconductor portion.
 3. Thesemiconductor structure of claim 1, wherein the dielectric gate spacercontacts peripheral portions of the pair of top horizontal surfaces ofthe base semiconductor portion.
 4. The semiconductor structure of claim1, wherein: a horizontal interface between the gate dielectric and thepedestal semiconductor portion is located above the horizontal planeincluding the pair of top horizontal surfaces of the base semiconductorportion; and a vertical distance between the horizontal interfacebetween the gate dielectric and the pedestal semiconductor portion andthe horizontal plane including the pair of top horizontal surfaces ofthe base semiconductor portion is in a range from 100 nm to 2 microns.5. The semiconductor structure of claim 1, further comprising a shallowtrench isolation spacer that comprises a same insulating material as thedielectric gate spacer, adjoined to the dielectric gate spacer, andcontacts sidewalls of the shallow trench isolation structure that arelocated above the horizontal plane including the pair of top horizontalsurfaces of the base semiconductor portion.
 6. The semiconductorstructure of claim 5, wherein an entirety of sidewalls of pair ofepitaxial semiconductor material portions contacts a respective sidewallof the dielectric gate spacer or a respective sidewall of the shallowtrench isolation spacer.
 7. The semiconductor structure of claim 1,further comprising: a dielectric liner continuously extending over andcontacting a top surface of the source region, a top surface of thedrain region, an outer sidewall of the dielectric gate spacer, and a topsurface of the gate stack structure; a planarization dielectric layeroverlying the dielectric liner and having a planar top surface; andcontact via structures vertically extending through the planarizationdielectric layer and the dielectric liner and contacting a respectiveone of the source region, the drain region, and the gate electrode. 8.The semiconductor structure of claim 1, wherein: the base semiconductorportion comprises a first single crystalline semiconductor materialportion having a doping of a first conductivity type; the pedestalsemiconductor portion comprises of a second single crystallinesemiconductor material potion having a doping of a second conductivitytype that is an opposite of the first conductivity type; and the sourceregion and the drain region have a doping of the second conductivitytype.
 9. The semiconductor structure of claim 8, wherein the firstsingle crystalline semiconductor material portion and the second singlecrystalline semiconductor material portion have a same materialcomposition and are epitaxially aligned to each other.
 10. Thesemiconductor structure of claim 8, wherein each of the pair ofepitaxial semiconductor material portions comprises a respectiveextension region having a doping of the second conductivity type andcontacting a bottom surface of a respective one of the source region andthe drain region.
 11. The semiconductor structure of claim 8, whereinthe second single crystalline semiconductor material potion contactssidewalls of the dielectric gate spacer.
 12. The semiconductor structureof claim 8, wherein the pedestal semiconductor portion comprises asource extension region and a drain extension region having a doping ofthe second conductivity type, adjoined to a bottom surface of the gatedielectric, contacting a bottom surface of the dielectric gate spacer,and including a horizontally-extending region having a respective topsurface within the horizontal plane including the pair of top horizontalsurfaces.
 13. The semiconductor structure of claim 8, wherein the pairof epitaxial semiconductor material portions comprises: a raised sourceextension region contacting a bottom surface of the source region andhaving a bottom surface located within the horizontal plane includingthe pair of top horizontal surfaces; and a raised drain extension regioncontacting a bottom surface of the drain region and having a bottomsurface located within the horizontal plane including the pair of tophorizontal surfaces.
 14. A method of forming a semiconductor structure,comprising: forming a shallow trench isolation structure comprising adielectric material in an upper region of a semiconductor material layerhaving a doping of a first conductivity type, wherein the shallow trenchisolation structure laterally surrounds a device region of thesemiconductor material layer; forming a gate stack structure comprisinga gate dielectric and a gate electrode over a center portion of thedevice region of the semiconductor material layer; vertically recessingareas of the device region of the semiconductor material layer that arenot covered by the gate stack structure, wherein the device region ofthe semiconductor material layer includes a base semiconductor portioncomprising a pair of top horizontal surfaces that are recessed below abottom surface of the gate dielectric and a pedestal semiconductorportion located between the pair of top horizontal surfaces and thebottom surface of the gate dielectric; forming a dielectric gate spaceron the pair of sidewalls of the gate stack structure and on a pair ofsidewalls of the pedestal semiconductor portion; and forming a pair ofepitaxial semiconductor material portions by growing a singlecrystalline semiconductor material from the pair of top horizontalsurfaces of the base semiconductor portion, wherein a source region anda drain region having a doping of a second conductivity type that is anopposite of the first conductivity type are formed within upper regionsof the pair of epitaxial semiconductor material portions.
 15. The methodof claim 14, wherein: the areas of the device region are verticallyrecessed employing the gate stack structure as an etch mask; thepedestal semiconductor portion comprises a pair of sidewalls that arevertically coincident with sidewalls of the gate stack structure; andthe dielectric gate spacer is formed on the pair of sidewalls of thepedestal semiconductor portion.
 16. The method of claim 15, wherein: thedielectric gate spacer is formed by deposition of a conformal dielectricmaterial layer and by anisotropically etching the conformal dielectricmaterial layer after vertically recessing the areas of the device regionthat are not covered by the gate stack structure; and a remainingportion of the conformal dielectric material layer comprises a shallowtrench isolation spacer that comprises a same insulating material as thedielectric gate spacer, contacting sidewalls of the shallow trenchisolation structure and peripheral potions of the pair of top horizontalsurfaces of the base semiconductor portion, and adjoined to thedielectric gate spacer.
 17. The method of claim 14, wherein: the singlecrystalline semiconductor material is grown with in-situ doping withdopants of a second conductivity type; and the source region and thedrain region are formed by implantation of dopants of the secondconductivity type into the upper regions of the pair of epitaxialsemiconductor material portions.
 18. The method of claim 14, wherein anentirety of the base semiconductor portion and the pedestalsemiconductor portion has a doping of the first conductivity type duringformation of the pair of epitaxial semiconductor material portions. 19.The method of claim 14, wherein: the single crystalline semiconductormaterial is grown with in-situ doping with dopants of the secondconductivity type; and the source region and the drain region are formedby implantation of dopants of the second conductivity type into theupper regions of the pair of epitaxial semiconductor material portions;and the method further comprises forming at least one doped extensionregion having a doping of the second conductivity type underneath atleast one sidewall of the pedestal semiconductor portion prior toformation of the dielectric gate spacer,
 20. The method of claim 19,wherein each of the at least one doped extension region is adjoined to arespective one of the pair of epitaxial semiconductor material portionsupon formation of the pair of epitaxial semiconductor material portions.